SD2931-10W

P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P19

Electrical characteristics SD2931-10

4/19 DocID7076 Rev 10

2 Electrical characteristics

(T

CASE

= 25 °C).

2.1 Static

2.2 Dynamic

Table 4. Static (per side)

Symbol Test conditions Min Typ Max Unit

V

(BR)DSS

V

GS

= 0 I

DS

= 100 mA 125 V

I

DSS

V

GS

= 0 V

DS

= 50 V 50 μA

IGSS

V

GS

= 20 V

DS

= 0 250 nA

V

GS(Q)

(1)

1. V

GS(Q)

sorted with alpha/numeric code marked on unit.

V

DS

= 10 V I

D

= 250 mA See table below V

V

DS(ON)

V

GS

= 10 V I

D

= 10 A 3.0 V

G

FS

V

DS

= 10 V I

D

= 5 A 5 6 mho

C

ISS

V

GS

= 0 V

DS

= 50 V f = 1 MHz 480 pF

C

OSS

V

GS

= 0 V

DS

= 50 V f = 1 MHz 190 pF

CRSS

V

GS

= 0 V

DS

= 50 V f = 1 MHz 18 pF

Table 5. Dynamic

Symbol Test conditions Min Typ Max Unit

P

OUT

V

DD

= 50 V I

DQ

= 250 mA f = 175 MHz 150 W

G

PS

V

DD

= 50 V I

DQ

= 250 mA P

OUT =

150 W f = 175 MHz 14 15 dB

n

D

V

DD

= 50 V I

DQ

= 250 mA P

OUT

= 150 W f = 175 MHz 55 65 %

Load

mismatch

V

DD

= 50 V I

DQ

= 250 mA P

OUT =

150 W f = 175 MHz

All phase angles

10:1 VSWR

DocID7076 Rev 10 5/19

SD2931-10 Electrical characteristics

19

Table 6. V

GS

sorts

Symbol Value Symbol Value

A 2.0 - 2.1 K 2.9 - 3.0

B 2.1 - 2.2 L 3.0 - 3.1

C 2.2 - 2.3 M 3.1 - 3.2

D 2.3 - 2.4 N 3.2 - 3.3

E 2.4 - 2.5 P 3.3 - 3.4

F 2.5 - 2.6 Q 3.4 - 3.5

G 2.6 - 2.7 R 3.5 - 3.6

H 2.7 - 2.8 S 3.6 - 3.7

J 2.8 - 2.9

Transient thermal impedance SD2931-10

6/19 DocID7076 Rev 10

3 Transient thermal impedance

Figure 2. Transient thermal impedance

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P1-P3 P4-P6 P7-P9 P10-P12 P13-P15 P16-P18 P19-P19

SD2931-10W

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

RF MOSFET Transistors RF PWR N-Ch MOS 150W 14dB 175MHz

Lifecycle:

New from this manufacturer.

Delivery:

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