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Model G200N50W4
Features:
• RoHS Compliant
• 200 Watts
• DC - 2.2 GHz
• AlN Ceramic
• Non-Nichrome Resistive
Element
• Low VSWR
• 100% Tested
Flange Mount Termination
Description
The G200N50W4 is high performance Aluminum Nitride (AlN) flange
mount termination intended as a cost competitive alternative to Beryllium
Oxide (BeO). The termination is well suited to all cellular frequency bands
such as; AMPS, GSM, DCS, PCS, PHS and UMTS. The high power
handling makes the part ideal for terminating circulators and for use in
power combiners. The termination is also RoHS compliant!
General Specifications
Resistive Element
Thick Film
Substrate
AlN Ceramic
Mounting Flange
Nickel Plated Copper
Operating Temperature
-50 to +150°C (see de rating chart)
Tolerance is ±0.010”, unless otherwise specified. Designed to meet of exceed
applicable portions of MIL-E-5400. All dimensions in inches.
Electrical Specifications
Resistance Value:
50 Ohms, ± 2%
Power:
200 Watts
Frequency Range:
DC – 2.2 GHz
Return Loss
> 20 dB from DC to 2.2 GHz
Specification based on unit properly installed using suggested mounting instructions
and a 50 ohm nominal impedance. Specifications subject to change.
Outline Drawing
UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN INCHES
1 of 2
200 Watts, 50
