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NSVBAS21HT1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2016
September, 2017 − Rev. 12
1 Publication Order Number:
BAS21HT1/D
BAS21H, NSVBAS21H
High Voltage
Switching Diode
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
MAXIMUM RATINGS
Rating Symbol Value Unit
Continuous Reverse Voltage V
R
250 V
Repetitive Peak Reverse Voltage V
RRM
250 V
Peak Forward Current I
F
200 mA
Repetitive Peak Forward Current I
FRM
500 mA
Non−Repetitive Peak Forward Surge
Current, 60 Hz
I
FSM(surge)
2.5 A
Non−Repetitive Peak Forward Current
(Square Wave, T
J
= 25°C prior to
surge)
t = 1 ms
t = 10 ms
t = 100 ms
t = 1 ms
t = 1 s
I
FSM
20
20
10
4
1
A
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR−5 Board,
(Note 1) T
A
= 25°C
Derate above 25°C
P
D
200
1.57
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
q
JA
635 °C/W
Junction and Storage Temperature
Range
T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 Minimum Pad
HIGH VOLTAGE
SWITCHING DIODE
Device Package Shipping
†
ORDERING INFORMATION
SOD−323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
www.onsemi.com
MARKING
DIAGRAM
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
BAS21HT1G,
NSVBAS21HT1G
SOD−323
(Pb−Free)
3000 / Tape & Ree
l
JS M G
G
1
2
JS = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
BAS21HT3G,
NSVBAS21HT3G
SOD−323
(Pb−Free)
10000 / Tape &
Reel
BAS21H, NSVBAS21H
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(V
R
= 200 Vdc)
(V
R
= 200 Vdc, T
J
= 150°C)
I
R
−
−
0.1
100
mAdc
Reverse Breakdown Voltage
(I
BR
= 100 mAdc)
V
(BR)
250 − Vdc
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
V
F
−
−
1000
1250
mV
Diode Capacitance
(V
R
= 0, f = 1.0 MHz)
C
D
− 5.0 pF
Reverse Recovery Time
(I
F
= I
R
= 30 mAdc, R
L
= 100 W)
t
rr
− 50 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (I
F
) of 30 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 30 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820 W
0.1 mF
D.U.T.
V
R
100 mH
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
50 W INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
i
R(REC)
= 3.0 mA
OUTPUT PULSE
(I
F
= I
R
= 30 mA; MEASURED
at i
R(REC)
= 3.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAS21H, NSVBAS21H
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 2. Forward Voltage Figure 3. Reverse Leakage
FORWARD CURRENT (mA)
7000
REVERSE CURRENT (nA)
REVERSE VOLTAGE (V)
5000
3000
5
0
21
6000
4000
6
5 10 20 50 100 200
1
2
3
4
T
A
= −55°C
300
T
A
= 155°C
T
A
= 25°C
T
A
= −55°C
1 10 100 1000
1
200
400
600
800
1000
1200
FORWARD VOLTAGE (mV)
155°C
25°C
Figure 4. Diode Capacitance
V
R
, REVERSE VOLTAGE (V)
6543210
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
C
d
, DIODE CAPACITANCE (pF)
87
Figure 5. Maximum Non−repetitive Peak
Forward Current as a Function of Pulse
Duration, Typical Values
T
p
(mSec)
10.10.010.001
0
5
10
15
20
25
I
FSM
(A)
10
Based on square wave currents
T
J
= 25°C prior to surge
P1-P3P4-P4

NSVBAS21HT1G

Mfr. #:
Buy NSVBAS21HT1G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching SS SWCH DIO 250V
Lifecycle:
New from this manufacturer.
Delivery:
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