OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

RF601T2D

P1-P3P4-P4
Data Sheet
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Fast recovery diode
RF601T2D
Applications Dimensions (Unit : mm)  Structure
General rectification
Features
1) Cathode common type.(TO-220)
2) Ultra Low V
F
3) Very fast recovery
4) Low switching loss
Construction
Silicon epitaxial planar
Absolute maximum ratings (Ta=25C)
Symbol Unit
V
RM
V
V
R
V
Io A
I
FSM
A
Tj
C
Tstg C
Electrical characteristic (Ta=25C)
Symbol Min. Typ. Max. Unit
V
F
- 0.87 0.93 V
I
F
=3A
Reverse current
I
R
- 0.01 10 μA
V
R
=200V
Reverse recovery time trr - 18 25 ns
I
F
=0.5A,I
R
=1A,Irr=0.25*I
R
Parameter Conditions
Forward voltage
Parameter Limits
Reverse voltage (repetitive peak) 200
Reverse voltage (DC) 200
Average rectified forward current (*1)
Storage temoerature
55 to 150
(*1)Business frequency, Rating of R-load, Tc=132CMAX. 1/2 Io per diode
6
Forward current surge peak (60Hz/1cyc) 60
Junction temperature 150
ROHM : ＴO220FN
①
Manufacture Date
1.2
1.3
0.8
(1) (2) (3)
10.0±0.3
　　　 0.1
5.0±0.2 8.0±0.2
12.0±0.2
2.8±0.2
　　　 0.1
4.5±0.3
　　　 0.1
0.7±0.1
0.05
2.6±0.5
13.5MIN
8.0
15.0±0.4
　 0.2
①
(1) (2) (3)
1/3
2011.05 - Rev.C
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RF601T2D
　
Electrical characteristics curves
0
50
100
150
200
250
300
AVE:126.0A
8.3ms
Ifsm
1cyc
840
850
860
870
880
890
0
10
20
30
40
50
60
70
80
90
100
0
5
10
15
20
25
30
AVE:13.7ns
Ta=25C
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
n=10pcs
50
60
70
80
90
100
110
120
130
140
150
AVE:99.4pF
Ta=25C
f=1MHz
V
R
=0V
n=10pcs
0.001
0.01
0.1
1
10
0 100 200 300 400 500 600 700 800 900 100
0
Ta=150C
Ta=125C
Ta=75C
Ta=25C
Ta=-25C
1
10
100
0 5 10 15 20 25 30
f=1MHz
0.1
1
10
100
1000
10000
Ta=150C
Ta=125C
Ta=75
C
Ta=25
C
Ta=-25
C
10
100
1000
1 10 100
t
Ifsm
0.1
1
10
100
0.001 0.01 0.1 1 10 100 1000
Rth(j-a)
Rth(j-c)
1ms
IM=100mA
I
F
=3A
300us
time
Mounted on epoxy board
0
2
4
6
8
10
0246810
Sin(=180)
D=1/2
DC
1
10
100
1000
110100
8.3ms
Ifsm
1cyc
8.3ms
FORWARD VOLTAGE:V
F
(mV)
V
F
-I
F
CHARACTERISTICS
FORWARD CURRENT:I
F
(A)
REVERSE CURRENT:I
R
(nA)
REVERSE VOLTAGE:V
R
(V)
V
R
-I
R
CHARACTERISTICS
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
V
F
DISPERSION MAP
FORWARD VOLTAGE:V
F
(mV)
REVERSE CURRENT:I
R
(nA)
I
R
DISPERSION MAP
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Ct DISPERSION MAP
AVE:4.60nA
Ta=25C
I
F
=3A
n=30pcs
Ta=25
C
V
R
=200V
n=30pcs
AVE:859.4mV
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (
C/W)
FORWARD POWER
DISSIPATION:Pf(W)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
trr DISPERSION MAP
REVERSE RECOVERY TIME:trr(ns)
I
FSM
DISPERSION MAP
2/3
2011.05 - Rev.C
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
RF601T2D
　
0
5
10
15
0 25 50 75 100 125 150
Sin(
=180)
D=1/2
DC
AMBIENT TEMPERATURE:Ta(
C)
Derating Curve"(Io-Ta)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
CASE TEMPARATURE:Tc(C)
Derating Curve"(Io-Tc)
0
5
10
15
0 25 50 75 100 125 150
DC
D=1/2
Sin(=180)
T
Tj=150C
D=t/T
t
V
R
Io
V
R
=100V
0A
0V
T
Tj=150C
D=t/T
t
V
R
Io
V
R
=100V
0A
0V
0
5
10
15
20
25
30
No break at 30kV
C=100pF
R=1.5k
C=200pF
R=0
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
ESD DISPERSION MAP
3/3
2011.05 - Rev.C
P1-P3P4-P4

RF601T2D

Mfr. #:
Buy RF601T2D
Manufacturer:
Description:
Rectifiers FAST 200V 6A
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet