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GCMS020A120B1H1

P1-P3P4-P6P7-P8
Preliminary Data Sheet
GCMS020A120B1H1
Page 1 of 8 Rev. 0.2 4/15/2016
GCMS020A120B1H1
1200V 20 mohm SiC MOSFET Module
Features：
Ultra Low Loss
High-Frequency Operation
Zero Reverse Recovery Current from Diode
Zero Turn-off Tail Current from MOSFET
Normally-off, Fail-safe Device Operation
Easy of Paralleling
Applications：
Solar Inverters
High Voltage DC/DC Converters
Motor Drives
EV Chargers
UPS
Absolute Maximum Ratings (T
C
=25℃ unless otherwise specified)
Symbol Description Value Units
V
DSmax
Drain-Source Voltage 1200 V
V
GSmax
Gate-Source Voltage Absolute Maximum values -10/+25 V
V
GSop
Gate-Source Voltage Recommended Operational Values -5/20 V
I
D(DC)
Continuous Drain Current
V
GS
=20V,T
C
=25
0
C
95 A
V
GS
=20V,T
C
=100
0
C
80 A
I
D(pluse)
Pulsed Drain Current Pulse width t
p
limited by T
jmax
160 A
P
D
Power Dissipation T
c
=25
0
C，T
j
=150
0
C 305 W
Preliminary Data Sheet
GCMS020A120B1H1
Page 2 of 8 Rev. 0.2 4/15/2016
Electrical Characteristics of MOSFET (T
C
=25℃ unless otherwise specified)
Symbol Description Conditions Min Typ Max Unit
V
(BR)DSS
Drain - Source Breakdown
Voltage
V
GS
=0V,I
D
=100uA 1.2 KV
V
GS(th) (chip)
Gate Threshold Voltage
V
DS
= 10 V,
I
D
=20 mA, T
j
=25
0
C
2.9
V
V
DS
= 10 V,
I
D
=20 mA, T
j
=125
0
C
2.4
V
DS
= 10 V,
I
D
=20 mA, T
j
=150
0
C
2.3
V
GS(th) (terminal)
Gate Threshold Voltage
V
DS
= 10 V,
I
D
=4 mA, T
j
=25
0
C
2.9
V
V
DS
= 10 V,
I
D
=4 mA, T
j
=125
0
C
2.2
V
DS
= 10 V,
I
D
=4 mA, T
j
=150
0
C
2.1
I
DSS
Zero Gate Voltage Drain
Current
V
DS
= 1.2 kV, V
GS
= 0V 1
mA
I
GSS
Gate-Source Leakage Current V
GS
= 20 V, V
DS
= 0V 400 nA
R
DS(on) (chip)
On State Resistance
V
GS
= 20 V, I
DS
=80 A, T
J
= 25˚C 20
mΩ
V
GS
= 20 V, I
DS
=80 A, T
J
= 150˚C 42
R
DS(on) (terminal)
On State Resistance
V
GS
= 20 V, I
DS
= 80 A, T
J
= 25˚C 20
mΩ V
GS
= 20 V, I
DS
= 80 A, T
J
= 125˚C 28
V
GS
= 20 V, I
DS
= 80 A, T
J
= 150˚C 32
g
fs
Transconductance
V
DS
= 20 V, I
DS
= 80 A, Tj=25
0
C
30.2
S
V
DS
= 20 V, I
DS
= 80 A, Tj=150
0
C
26.4
C
iss(chip)
Input Capacitance
V
DS
= 1000V, f = 1MHz,
V
AC
= 25 mV
3786
nF
C
oss(chip)
Output Capacitance 300
C
rss(chip)
Reverse Transfer Capacitance 20
E
on
Turn-On Switching Energy
V
DD
= 600 V,
V
GS
= -5V/+20V
I
D
= 80 A,
R
G(ext)
= 20 Ω
Tj=25
0
C
1.0
mJ
Tj=125
0
C
1.5
Tj=150
0
C
1.6
E
off
Turn-Off Switching Energy
Tj=25
0
C
0.3
Tj=125
0
C
0.6
Tj=150
0
C
0.8
R
G(int)
Internal Gate Resistance f =1MHz, V
AC
= 25 mV 0.9 Ω
Preliminary Data Sheet
GCMS020A120B1H1
Page 3 of 8 Rev. 0.2 4/15/2016
Q
GS
Gate-Source Charge
V
DD
= 800 V, V
GS
= -5V/+20V,
I
D
= 80 A,
56
nC
Q
GD
Gate-Drain Chrage 74
Q
G
Total Gate Chrage 230
t
d(on)
Turn-on delay time
V
DD
= 600V,
V
GS
= -5/+20V,
I
D
= 80 A,
R
G(ext)
= 20 Ω,
Timing relative
to V
DS
Tj=25
0
C
104
ns
Tj=125
0
C
98
Tj=150
0
C
96
t
r
Rise Time
Tj=25
0
C
63
Tj=125
0
C
56
Tj=150
0
C
57
t
d(off)
Turn-off delay time
Tj=25
0
C
181
Tj=125
0
C
216
Tj=150
0
C
220
t
f
Fall Time
Tj=25
0
C
94
Tj=125
0
C
99
Tj=150
0
C
99
R
θJCM
Thermal Resistance Junction-
To-Case for MOSFET
0.41
0
C /W
Built-in SiC Body Diode Characteristics (T
C
=25
0
C unless otherwise specified)
Symbol Description Conditions Min Typ Max Unit
V
SD(chip)
Diode Forward Voltage
I
SD
= 40 A, V
GS
= -5V , T
j
=25
0
C
3.6
V
I
SD
= 40 A, V
GS
= -5V, T
j
=150
0
C
3.3
T
rr
Reverse Recovery Time
I
SD
= 80 A, V
GS
= -5V ,
T
j
=25
0
C,V
R
=800V,
di
F
/dt= 2200 A/μs
108 ns
Q
rr
Reverse Recovery Charge 566 nC
I
rrm
Peak Reverse Recovery Current 30 A
P1-P3P4-P6P7-P8

GCMS020A120B1H1

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SIC MOSFET FULL BRIDGE MODULE B1
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