MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
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4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT−1123) (NSBA123JF3)
Total Device Dissipation
T
A
= 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
P
D
254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4)
R
q
JA
493
421
°C/W
Thermal Resistance, Junction to Lead (Note 3)
R
q
JL
193 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
100
nAdc
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
500
nAdc
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
0.2
mAdc
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50
Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
80 140
Collector *Emitter Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
0.6 0.5
Vdc
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 5.0 mA)
V
i(on)
1.1 0.8
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kW)
V
OH
4.9
Vdc
Input Resistor R1 1.5 2.2 2.9
kW
Resistor Ratio R
1
/R
2
0.038 0.047 0.056
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle v 2%.
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
www.onsemi.com
5
TYPICAL CHARACTERISTICS
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
7
010 20304050
150°C
25°C
−55°C
Figure 2. V
CE(sat)
vs. I
C
Figure 3. DC Current Gain
Figure 4. Output Capacitance Figure 5. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)V
R
, REVERSE BIAS VOLTAGE (V)
Figure 6. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
504020100
I
C
, COLLECTOR CURRENT (mA)
10
0
101
1000
10
1
0.01
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
C
ob
, CAPACITANCE (pF)
100
43210
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10
3020100
0.1
1
40 50
V
in
, INPUT VOLTAGE (V)
0.01
0.1
30
100
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V
CE
= 10 V
25°C
150°C
−55°C
6
5
4
3
2
1
0
25°C
−55°C
150°C
25°C
−55°C
150°C
MUN2135, MMUN2135L, MUN5135, DTA123JE, DTA123JM3, NSBA123JF3
www.onsemi.com
6
TYPICAL CHARACTERISTICS
NSBA123JF3
150°C
25°C
−55°C
Figure 7. V
CE(sat)
vs. I
C
Figure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)V
R
, REVERSE BIAS VOLTAGE (V)
Figure 11. Input Voltage vs. Output Current
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
1
0.1
504020100
I
C
, COLLECTOR CURRENT (mA)
100101
1000
10
1
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
h
FE
, DC CURRENT GAIN
50403020100
C
ob
, CAPACITANCE (pF)
100
0.001
1
10
I
C
, COLLECTOR CURRENT (mA)
10
3020100
0.1
1
40 50
V
in
, INPUT VOLTAGE (V)
0.01
0.01
0.1
30
100
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
V
O
= 5 V
V
O
= 0.2 V
I
C
/I
B
= 10
V
CE
= 10 V
−55°C
25°C
150°C
7
25°C
−55°C
150°C
012 3
100
25°C
150°C
−55°C
0.1
6
5
4
3
2
1
0

DTA123JET1G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - Pre-Biased 100mA 50V BRT PNP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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