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SIR426DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
Vishay Siliconix
SiR426DP
www.vishay.com
4
Document Number: 65162
S13-0461-Rev. B, 04-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
0.0 0.2 0.4 0.6 0.8 1.0 1.2
V
SD
- Source-to-Drain Voltage (V)
I
S
- Source Current (A)
1
0.01
0.001
0.1
10
100
T
J
= 25 °C
T
J
= 150 °C
- 1.0
- 0.7
- 0.4
- 0.1
0.2
0.5
- 50 - 25 0 25 50 75 100 125 150
I
D
= 250 µA
Variance (V)V
GS(th)
T
J
- Temperature (°C)
I
D
=5mA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power (Junction-to-Ambient)
0.000
0.012
0.024
0.036
0.048
0.060
012345678 910
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 25 °C
T
J
= 125 °C
I
D
=15A
0
30
60
90
120
150
011100.0 0.01
Time (s)
Power (W)
0.1
Safe Operating Area, Junction-to-Ambient
0.01
100
1
100
0.01
I
D
- Drain Current (A)
0.1
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
1ms
10 ms
100 ms
0.1 1 10
10
T
A
=25 °C
Single Pulse
Limited byR
DS(on)
*
1s
DC
10 s
BVDSS
Vishay Siliconix
SiR426DP
Document Number: 65162
S13-0461-Rev. B, 04-Mar-13
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
* The power dissipation P
D
is based on T
J(max.)
= 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Current Derating*
Power, Junction-to-Case
0
10
20
30
40
50
0 25 50 75 100 125 150
T
C
- Case Temperature (°C)
Power (W)
Power, Junction-to-Ambient
0.00
0.44
0.88
1.32
1.76
2.20
0 25 50 75 100 125 150
T
A
- Ambient Temperature (°C)
Power (W)
Vishay Siliconix
SiR426DP
www.vishay.com
6
Document Number: 65162
S13-0461-Rev. B, 04-Mar-13
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
For technical questions, contact: pmostechsupport@vishay.com
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?65162
.
Normalized Thermal Transient Impedance, Junction-to-Ambient
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 70 °C/W
3. T
JM
-- T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
Normalized Thermal Transient Impedance, Junction-to-Case
1
0.1
0.01
0.2
Duty Cycle = 0.5
Square WavePulse Duration (s)
Normalized Effective Transient
Thermal Impedance
0.1
10
-3
10
-2
110
-1
10
-4
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P9P10-P12P13-P13

SIR426DP-T1-GE3

Mfr. #:
Buy SIR426DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
Lifecycle:
New from this manufacturer.
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