BCP52-16

BCP52-16

LOW POWER PNP TRANSISTOR

■ SILICON EPITAXIAL PLANAR PNP MEDIUM

VOLTAGE TRANSISTOR

■ SOT-223 PLASTIC PACKAGE FOR

SURFACE MOUNTING CIRCUITS

■ TAPE AND REEL PACKING

■ THE NPN COMPLEMENTARY TYPE IS

BCP55-16

APPLICATIONS

■ MEDIUM VOLTAGE LOAD SWITCH

TRANSISTORS

■ OUTPUT STAGE FOR AUDIO AMPLIFIERS

CIRCUITS

■ AUTOMOTIVE POST-VOLTAGE

REGULATION

®

INTERNAL SCHEMATIC DIAGRAM

September 2003

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V

CBO

Collector-Base Voltage (I

E

= 0) -60 V

V

CEO

Collector-Emitter Voltage (I

B

= 0) -60 V

V

CER

Collector-Emitter Voltage (R

BE

= 1KΩ)

-60 V

V

EBO

Emitter-Base Voltage (I

C

= 0) -5 V

I

C

Collector Current -1 A

I

CM

Collector Peak Current (t

p

< 5 ms) -1.5 A

I

B

Base Current -0.1 A

I

BM

Base Peak Current (t

p

< 5 ms) -0.2 A

P

tot

Total Dissipation at T

amb

= 25

o

C 1.4 W

T

stg

Storage Temperature -65 to 150

o

C

T

j

Max. Operating Junction Temperature 150

o

C

1

2

2

3

SOT-223

Ordering Code Marking

BCP52-16 BCP5216

1/4

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

THERMAL DATA

R

thj-amb

• Thermal Resistance Junction-Ambient Max 89.3

o

C/W

• Device mounted on a PCB area of 1 cm

2

ELECTRICAL CHARACTERISTICS (T

case

= 25

o

C unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

I

CBO

Collector Cut-off

Current (I

E

= 0)

V

CB

= -30 V

V

CB

= -30 V T

j

= 125

o

C

-100

-10

nA

µA

V

(BR)CBO

Collector-Base

Breakdown Voltage

(I

E

= 0)

I

C

= -100 µA

-60 V

V

(BR)CEO

∗ Collector-Emitter

Breakdown Voltage

(I

B

= 0)

I

C

= -20 mA -60 V

V

(BR)CER

Collector-Emitter

Breakdown Voltage

(R

BE

= 1 KΩ)

I

C

= -100 µA

-60 V

V

(BR)EBO

Emitter-Base

Breakdown Voltage

(I

C

= 0)

I

E

= -10 µA

-5 V

V

CE(sat)

∗ Collector-Emitter

Saturation Voltage

I

C

= -500 mA I

B

= -50 mA -0.5 V

V

BE(on)

∗ Base-Emitter On

Voltage

I

C

= -500 mA V

CE

= -2 V -1 V

h

FE

∗ DC Current Gain I

C

= -5 mA V

CE

= -2 V

I

C

= -150 mA V

CE

= -2 V

I

C

= -500 mA V

CE

= -2 V

40

100

25

250

f

T

Transition Frequency I

C

= -10 mA V

CE

= -5 V f = 20 MHz 50 MHz

∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 1.5 %

BCP52-16

2/4

Obsolete Product(s) - Obsolete Product(s)

Obsolete Product(s) - Obsolete Product(s)

DIM.

mm inch

MIN. TYP. MAX. MIN. TYP. MAX.

A 1.80 0.071

B 0.60 0.70 0.80 0.024 0.027 0.031

B1 2.90 3.00 3.10 0.114 0.118 0.122

c 0.24 0.26 0.32 0.009 0.010 0.013

D 6.30 6.50 6.70 0.248 0.256 0.264

e 2.30 0.090

e1 4.60 0.181

E 3.30 3.50 3.70 0.130 0.138 0.146

H 6.70 7.00 7.30 0.264 0.276 0.287

V10

o

10

o

A1 0.02

P008B

SOT-223 MECHANICAL DATA

BCP52-16

3/4

Obsolete Product(s) - Obsolete Product(s)

BCP52-16

Mfr. #:

Manufacturer:

STMicroelectronics

Description:

Bipolar Transistors - BJT PNP Medium Power

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet

BCP52-16