IXGH17N100U1 Datasheet IXGH17N100U1, IXGH17N100AU1 | P4-P6

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 17N100U1

IXGH 17N100AU1

V

CE

- Volts

0 5 10 15 20 25

Capacitance - pF

0

250

500

750

1000

1250

1500

1750

2000

C

oes

C

res

f = 1MHz

Gate Charge - (nC)

0 102030405060708090100

V

GE

- Volts

1

3

5

7

9

11

13

15

V

CE

- Volts

0 200 400 600 800 1000

I

C

- Amperes

0.01

0.1

1

10

100

T

J

= 125°C

dV/dt < 3V/ns

Pulse Width - Seconds

0.0001 0.001 0.01 0.1 1 10

Z

thjc

(K/W)

0.01

0.1

1

Single Pulse

D=0.1

D=0.2

D=0.5

D = Duty Cycle

V

CE

= 800

I

C

= 17A

I

G

= 10mA

C

ies

D=0.01

D=0.02

D=0.05

17N100g2.JNB

Fig.10 Transient Thermal Impedance

Fig.9 Capacitance Curves

Fig.7 Gate Charge Fig.8 Turn-Off Safe Operating Area

di

F

/dt - A/µs

0 200 400 600

t

rr

- nanoseconds

0.0

0.2

0.4

0.6

0.8

di

F

/dt - A/µs

200 400 600

I

RM

- Amperes

0

10

20

30

40

50

di

F

/dt - A/µs

1 10 100 1000

Q

r

- nanocoulombs

0

1

2

3

4

T

J

= 100°C

V

R

= 540V

T

J

- Degrees C

0 40 80 120 160

Normalized I

RM

/Q

r

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

Q

r

I

RM

di

F

/dt - A/µs

0 100 200 300 400 500 600

t

fr

- nanoseconds

0

200

400

600

800

1000

V

FR

- Volts

0

10

20

30

40

50

t

fr

V

FR

T

J

= 125°C

I

F

=37A

Voltage Drop - Volts

0.5 1.0 1.5 2.0 2.5 3.0 3.5

Current - Amperes

0

20

40

60

80

100

T

J

= 150°C

T

J

= 100°C

T

J

= 25°C

typ.

I

F

= 60A

I

F

= 30A

I

F

= 15A

typ.

I

F

= 60A

I

F

= 30A

I

F

= 15A

max.

I

F

= 30A

typ.

I

F

= 60A

I

F

= 30A

I

F

= 15A

max.

I

F

= 30A

max.

I

F

= 30A

T

J

= 100°C

V

R

= 540V

T

J

= 100°C

V

R

= 540V

IXGH 17N100U1

IXGH 17N100AU1

Fig.11 Maximum Forward Voltage Drop Fig.12 Peak Forward Voltage V

FR

and

Forward Recovery Time t

FR

Fig.13Junction Temperature Dependence Fig.14 Reverse Recovery Chargee

off I

RM

and Q

r

Fig.15 Peak Reverse Recovery Current Fig.16 Reverse Recovery Time

IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715

4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025

IXYS reserves the right to change limits, test conditions, and dimensions.

IXGH 17N100U1

IXGH 17N100AU1

Fig.17 Diode Transient Thermal resistance junction to case

Pulse Width - Seconds

0.001 0.01 0.1 1

R

thJC

- K/W

0.01

0.10

1.00

IXGH17N100U1

IXGH17N100U1

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