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BSP149 E6327
P1-P3
P4-P6
P7-P9
BSP149
1 Power dissipation
2 Drain current
P
tot
=f(
T
A
)
I
D
=f(
T
A
);
V
GS
≥
10 V
0
0.5
1
1.5
2
0
40
80
120
160
P
tot
[W]
T
A
[°C]
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
40
80
120
160
I
D
[A]
T
A
[°C]
Rev. 2.1
page 4
2012-11-28
3 Safe operating area
4 Max. transient thermal impedance
I
D
=f(
V
DS
);
T
A
=25 °C;
D
=0
Z
thJA
=f(
t
p
)
parameter:
t
p
parameter:
D
=
t
p
/
T
10 µs
100 µs
1 ms
10 ms
DC
10
0
10
1
10
2
10
3
10
-3
10
-2
10
-1
10
0
10
1
I
D
[A]
V
DS
[V]
limited by
on-state
resistance
single pul
se
0.01
0.02
0.05
0.1
0.2
0.5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
Z
thJA
[K/W]
t
p
[s]
0
0.5
1
1.5
2
0
40
80
120
160
P
tot
[W]
T
A
[°C]
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
40
80
120
160
I
D
[A]
T
A
[°C]
Rev. 2.1
page 4
2012-11-28
BSP149
5 Typ. output characteristics
6 Typ. drain-source on resistance
I
D
=f(
V
DS
);
T
j
=25 °C
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
R
DS(on)
[
Ω
]
I
D
[A]
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
0.2
0.4
0.6
0.8
1
02468
1
0
I
D
[A]
V
DS
[V]
Rev. 2.1
page 5
2012-11-28
7 Typ. transfer characteristics
8 Typ. forward transconductance
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
g
fs
=f(
I
D
);
T
j
=25 °C
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
1
2
3
4
5
6
0
0.2
0.4
0.6
0.8
1
R
DS(on)
[
Ω
]
I
D
[A]
0
0.4
0.8
1.2
1.6
2
-
2
-
1
0123
I
D
[A]
V
GS
[V]
0
0.2
0.4
0.6
0.8
1
1.2
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
g
fs
[S]
I
D
[A]
-0.2 V
-0.1 V
0 V
0.1 V
0.2 V
0.5 V
1 V
10 V
0
0.2
0.4
0.6
0.8
1
02468
1
0
I
D
[A]
V
DS
[V]
Rev. 2.1
page 5
2012-11-28
BSP149
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=0.07 A;
V
GS
=0 V
V
GS(th)
=f(
T
j
);
V
DS
=3 V;
I
D
=400 µA
parameter:
I
D
typ
98 %
0
2
4
6
8
-60
-20
20
60
100
140
180
R
DS(on)
[
Ω
]
T
j
[°C]
typ
98 %
2 %
-3
-2.5
-2
-1.5
-1
-0.5
0
-60
-20
20
60
100
140
180
V
GS(th)
[V]
T
j
[°C]
Rev. 2.1
page 6
2012-11-28
11 Threshold voltage bands
12 Typ. capacitances
I
D
=f(
V
GS
);
V
DS
=3 V;
T
j
=25 °C
C
=f(
V
DS
);
V
GS
=-3 V;
f
=1 MHz
400 µA
J
K
L
M
N
0.01
0.1
1
10
-2
-1.5
-1
-0.5
I
D
[mA
]
V
GS
[V]
typ
98 %
0
2
4
6
8
-60
-20
20
60
100
140
180
R
DS(on)
[
Ω
]
T
j
[°C]
typ
98 %
2 %
-3
-2.5
-2
-1.5
-1
-0.5
0
-60
-20
20
60
100
140
180
V
GS(th)
[V]
T
j
[°C]
Ciss
Coss
Crss
10
100
1000
0
1
02
03
0
C
[pF]
V
DS
[V]
Rev. 2.1
page 6
2012-11-28
P1-P3
P4-P6
P7-P9
BSP149 E6327
Mfr. #:
Buy BSP149 E6327
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 200V 660MA SOT-223
Lifecycle:
New from this manufacturer.
Delivery:
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