STN2NE10
N - CHANNEL 100V - 0.33 Ω - 2A - SOT-223
STripFET POWER MOSFET
PRELIMINARY DATA
■
TYPICAL R
DS(on)
= 0.33
Ω
■
EXCEPTIONAL dv/dt CAPABILITY
■
AVALANCHE RUGGED TECHNOLOGY
■
100 % AVALANCHE TESTED
■
APPLICATION ORIENTED
CHARACTERIZATION
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics unique "Single Feature
Size
" stip-based process. The resulting transi-
stor shows extremely high packing density for low
on-resistance, rugged avalanche characteristics
and less critical alignment steps therefore a re-
markable manufacturing reproducibility.
APPLICATIONS
■
DC MOTOR CONTROL (DISK DRIVES,etc.)
■
DC-DC & DC-AC CONVERTERS
■
SYNCHRONOUS RECTIFICATION
®
INTERNAL SCHEMATIC DIAGRAM
TYPE V
DSS
R
DS(on)
I
D
STN2NE10 100 V < 0.4 Ω 2 A
January 1999
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
= 0) 100 V
V
DGR
Drain- gate Voltage (R
GS
= 20 kΩ)
100 V
V
GS
Gate-source Voltage ± 20 V
I
D
Drain Current (continuous) at T
c
= 25
o
C2A
I
D
Drain Current (continuous) at T
c
= 100
o
C1.3A
I
DM
(•) Drain Current (pulsed) 8 A
P
tot
Total Dissipation at T
c
= 25
o
C2.5W
Derating Factor 0.02 W/
o
C
dv/dt(
1
) Peak Diode Recovery voltage slope 6 V/ns
T
stg
Storage Temperature -65 to 150
o
C
T
j
Max. Operating Junction Temperature 150
o
C
(
•
) Pulse width limited by safe operating area (
1
) I
SD
≤
7 A, di/dt
≤
200 A/
µ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
New RDS (on) spec. starting from JULY 98
1
2
2
3
SOT-223
1/5
Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s) Obsolete Product(s) - Obsolete Product(s)
