BY458TR

BY448 , BY458
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 27-Aug-12
1
Document Number: 86006
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Standard Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
Glass passivated junction
Hermetically sealed package
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
High voltage rectification
Efficiency diode in horizontal deflection circuits
949539
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BY458 BY458TR 5000 per 10" tape and reel 25 000
BY458 BY458TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BY448 V
R
= 1500 V, I
FAV
= 2 A SOD-57
BY458 V
R
= 1200 V, I
FAV
= 2 A SOD-57
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage See electrical characteristics
BY448 V
R
= V
RRM
1500 V
BY458 V
R
= V
RRM
1200 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
30 A
Average forward current I
FAV
2A
Junction temperature T
j
140 °C
Storage temperature range T
stg
- 55 to + 175 °C
Non repetitive reverse avalanche energy l
(BR)R
= 0.4 A E
R
10 mJ
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
l = 10 mm, T
L
= constant R
thJA
45 K/W
On PC board with spacing 25 mm R
thJA
100 K/W
BY448 , BY458
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 27-Aug-12
2
Document Number: 86006
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX UNIT
Forward voltage I
F
= 3 A V
F
--1.6V
Reverse current
V
R
= V
RRM
I
R
--3μA
V
R
= V
RRM
, T
j
= 140 °C I
R
- - 140 μA
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A t
rr
- - 2000 ns
Total reverse recovery time I
F
= 1 A, - dI
F
/dt = 0.05 A/μs t
rr
- - 20 μs
0
20
40
80
60
100
120
151050 202530
R
thJA
- Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)
949101
ll
T
L
= constant
0.001
0.01
0.1
1
10
100
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
16417
V
F
- Forward Voltage (V)
I
F
- Forward Current (A)
T
j
= 150 °C
T
j
= 25 °C
0
0.5
1.0
1.5
2.0
2.5
16418
0755025 125100 150
T
amb
- Ambient Temperature (°C)
I
FAV
- Average Forward Current (A)
V
R
= V
RRM
half sine wave
R
thJA
= 45 K/W
l = 10 mm
R
thJA
= 100 K/W
PCB: d = 25 mm
1
10
100
1000
25 50 75 100 125 150
16419
T
j
- Junction Temperature (°C)
I
R
- Reverse Current (μA)
V
R
= V
RRM
BY448 , BY458
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 27-Aug-12
3
Document Number: 86006
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
50
100
150
200
250
300
350
400
25 50 75 100 125 150
16420
T
j
- Junction Temperature (°C)
P
R
- Reverse Power Dissipation (mW)
V
R
= V
RRM
P
R
- Limit at 100 % V
R
P
R
- Limit at 80 % V
R
0
5
10
15
20
25
30
35
0.1 1 10 100
16421
V
R
- Reverse Voltage (V)
C
D
- Diode Capacitance (pF)
f = 1 MHz
20543
3.6 (0.142) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
0.82 (0.032) max.

BY458TR

Mfr. #:
Manufacturer:
Vishay
Description:
Rectifiers 1200 Volt 2.0 Amp 30 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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