S300BR

V
RRM
= 100 V - 600 V
I
F
= 300 A
Features
• High Surge Capability DO-9 Package
• Types up to 600 V V
RRM
Parameter Symbol S300B (R) S300D (R) S300E (R) S300G (R) Unit
Re
p
etitive
p
eak reverse
V
100
200
300
400
V
S300B thru S300JR
S300J (R)
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
Silicon Standard
Recover
y
Diode
Conditions
600
pp
voltage
V
RRM
100
200
300
400
V
RMS reverse voltage
V
RMS
70 140 212 280 V
DC blocking voltage
V
DC
100 200 300 400 V
Continuous forward
I
F
300 300 300 300 A
Operating temperature
T
j
-60 to 200 -60 to 200 -60 to 200 -60 to 200 °C
Storage temperature
T
stg
-60 to 200 -60 to 200 -60 to 200 -60 to 200 °C
Parameter Symbol S300B (R) S300D (R) S300E (R) S300G (R) Unit
Diode forward voltage 1.2 1.2 1.2 1.2
10 10 10 10 μA
12 12 12 12 mA
Thermal characteristics
Thermal resistance,
junction - case
R
thJC
0.16 0.16 0.16 0.16 °C/W
A6850
V
R
= 100 V, T
j
= 25 °C
I
F
= 300 A, T
j
= 25 °C
T
C
130 °C
Conditions
6850 6850
300
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive
forward current, Half Sine
Wave
I
F,SM
Reverse current
I
R
V
F
-60 to 200
S300J (R)
10
V
R
= 100 V, T
j
= 175 °C
0.16
1.2
12
V
-60 to 200
T
C
= 25 °C, t
p
= 8.3 ms
6850 6850
600
420
600
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1
S300B thru S300JR
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2

S300BR

Mfr. #:
Manufacturer:
GeneSiC Semiconductor
Description:
Rectifiers 100V 300A REV Leads Std. Recovery
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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