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VS-SD1100C30L

P1-P3P4-P6P7-P8
VS-SD1100C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Jan-18
4
Document Number: 93535
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Current Ratings Characteristics
Fig. 8 - Current Ratings Characteristics
Fig. 9 - Forward Power Loss Characteristics
Fig. 10 - Forward Power Loss Characteristics
Fig. 11 - Forward Power Loss Characteristics
Fig. 12 - Forward Power Loss Characteristics
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 200 400 600 800 1000 1200 1400
30°
60°
90°
120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD 1100C..C Series (2500V to 3200V)
(Double Side Cooled )
R (D C) = 0.038 K/W
thJ-h s
20
30
40
50
60
70
80
90
100
110
120
130
140
150
0 400 800 1200 1600 2000 2400
30°
60°
90°
180°
DC
120°
Avera ge Forward Curren t (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD1100C..C Series (2500V to 3200V)
(Double Side Cooled)
R (D C) = 0.038 K/W
thJ-h s
0
500
1000
1500
2000
2500
3000
3500
040080012001600
180°
120°
90°
60°
30°
RMS Limit
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
Conduction Angle
SD1100C..C Series
(400V to 2000V)
T = 180°C
J
0
500
1000
1500
2000
2500
3000
3500
4000
4500
0 500 1000 1500 2000 2500 3000
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average Forward Power Loss (W )
Average Forward Current (A)
SD1100C..C Series
(400V to 2000V)
T = 180°C
J
0
500
1000
1500
2000
2500
3000
0 200 400 600 800 1000 1200 1400
180°
120°
90°
60°
30°
RMS Limit
Conduction Angle
Maximum A verage Forward Power Loss (W)
Average Forward Current (A)
SD1100C..C Series
(2500V to 3200V)
T = 150°C
J
0
500
1000
1500
2000
2500
3000
3500
0 400 800 1200160020002400
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average Forward Power Loss (W)
Average Forward C urrent (A)
SD1100C..C Series
(2500V to 3200V )
T = 150°C
J
VS-SD1100C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Jan-18
5
Document Number: 93535
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 13 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 14 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 15 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 16 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 17 - Forward Voltage Drop Characteristics
Fig. 18 - Forward Voltage Drop Characteristics
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
001011
N um b er O f E q u a l A m p l itu d e H a l f C y cle Cu rre nt P u l se s (N )
Peak Half Sine Wave Forward Current (A)
In it i a l T = 1 8 0 ° C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Ra ted V A p p lied Fo llow in g Surg e .
RRM
SD 1 100C ..C Series
(400V to 200 0V
)
3000
4000
5000
6000
7000
8000
9000
10000
11000
12000
13000
14000
0.01 0.1 1
Pulse Train Duration (s)
Pea k Half Sine Wave Forward Current (A)
Versus Pulse Train Duration.
In it ia l T = 1 80 °C
No Voltage Reapplied
Rated V Reapplied
RRM
J
Maximum Non Repetitive Surge Current
SD1100C..C Series
(400V to 2000V
)
3000
4000
5000
6000
7000
8000
9000
10000
11000
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave Forward Current (A)
Initial T = 150 °C
No Voltage Reapplied
Rated V Reapplied
J
RRM
Versus Pulse Train Duration.
SD1100C..C Series
(2500V to 3200V)
M aximum Non Repet itive Surge Current
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4
T = 25°C
J
Instan taneous Forward Voltage (V)
Instantaneous Forw ard Current (A)
T = 180°C
J
SD1100C..C Series
(400V to 2000V
)
100
1000
10000
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
T = 25°C
J
In stantaneous Forward Voltage (V)
In stantaneous Forw ard Current (A)
T = 150°C
J
SD 1100 C..C Se ries
(2500V to 3200V
)
VS-SD1100C..C Series
www.vishay.com
Vishay Semiconductors
Revision: 11-Jan-18
6
Document Number: 93535
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 19 - Thermal Impedance Z
thJ-hs
Characteristics
ORDERING INFORMATION TABLE
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95249
0.001
0.01
0.1
0111.010.0100.0
Sq u a re W a ve Pu lse D uration (s)
th J -h s
T ra n s ie n t T h e rm a l Im p e d a n c e Z ( K /W )
Stea d y State Va lue
R = 0 .076 K/W
(Single Side C ooled)
R = 0 .038 K/W
(Double Side C ooled)
(D C O p eration)
thJ-hs
thJ-hs
SD1 100C..C Series
1
- Diode
- Vishay Semiconductors product
2
- Essential part number
3
- 0 = standard recovery
4
- C = ceramic PUK
5
- Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6
7
- C = PUK case B-43
Device code
51 32 4 6 7
SDVS- 110 0 C 32 C
P1-P3P4-P6P7-P8

VS-SD1100C30L

Mfr. #:
Buy VS-SD1100C30L
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 3000 Volt 1400 Amp
Lifecycle:
New from this manufacturer.
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