ADG751BRT-REEL

REV.
ADG751
–6–
V
D
OR V
S
DRAIN SOURCE VOLTAGE – Volts
35
5
01
R
ON
V
23 4 5
30
25
20
15
10
V
DD
= +5.5V
T
A
= +258C
V
DD
= +2.7V
V
DD
= +3.3V
V
DD
= +4.5V
Figure 1. On Resistance as a Function of V
D
(V
S
) Single
Supplies (A Grade)
V
D
OR V
S
DRAIN SOURCE VOLTAGE – Volts
35
5
0 0.5
R
ON
V
1.0 1.5 2.0 2.5
30
25
20
15
10
–408C
3.0
+258C
+1258C
+858C
V
DD
= +3V
Figure 2. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures V
DD
= 3 V (A Grade)
V
DD
= +5V
V
D
OR V
S
DRAIN SOURCE VOLTAGE – Volts
35
5
01
R
ON
V
23
30
25
20
15
10
–408C
5
+258C
+1258C
+858C
4
0
Figure 3. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures V
DD
= 5 V (A Grade)
V
D
OR V
S
DRAIN SOURCE VOLTAGE – Volts
45
15
0 1.0
R
ON
V
2.0 3.0
40
35
30
25
20
4.0 5.0 5.4
V
DD
= +2.7V
V
DD
= +3.3V
V
DD
= +4.5V
V
DD
= +5.5V
T
A
= +258C
50
55
60
65
Figure 4. On Resistance as a Function of V
D
(V
S
) Single
Supplies (B Grade)
V
D
OR V
S
DRAIN SOURCE VOLTAGE – Volts
45
15
0 0.4
R
ON
V
1.2 3.0
40
35
30
25
20
50
55
60
65
V
DD
= +3V
0.8 1.6 2.0 2.4 2.8
–408C
+258C
+858C
+1258C
Figure 5. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures V
DD
= 3 V (B Grade)
V
D
OR V
S
DRAIN SOURCE VOLTAGE – Volts
20
0
R
ON
V
5.0
15
10
5
0
25
V
DD
= +5V
2.0
–408C
+258C
+858C
+1258C
1.0 4.03.0
50
45
40
35
30
55
60
65
Figure 6. On Resistance as a Function of V
D
(V
S
) for
Different Temperatures V
DD
= 5 V (B Grade)
–Typical Performance Characteristics
A
REV.
ADG751
–7–
FREQUENCY – MHz
0
110
BANDWIDTH – dB
–5
–10
T
A
= +258C
100
300
Figure 7. On Response vs. Frequency (A Grade)
FREQUENCY – MHz
0
1
100
BANDWIDTH – dB
–5
–10
10
300
T
A
= +258C
Figure 8. On Response vs. Frequency (B Grade)
FREQUENCY – MHz
0
110
OFF ISOLATION – dB
100
–25
–50
–75
–100
–125
300
A GRADE
B GRADE
T
A
= +258C
Figure 9. Off Isolation vs. Frequency for Both Grades
FREQUENCY – Hz
10n
0.1
I
DD
– Amps
1k 10k
100n
10m
1m
1m
10m
100k 100M 10M
B GRADE
A GRADE
V
DD
= +5V
T
A
= +258C
Figure 10. Supply Current vs. Input Switching Frequency
SOURCE VOLTAGE – Volts
0
Q
INJ
– pC
5.0
–10
2.0
1.0 4.03.0
–8
–6
–4
–2
0
2
4
6
V
DD
= +5V
T
A
= +258C
V
DD
= +3V
Figure 11. Charge Injection vs. Source/Drain Voltage
A
REV.
ADG751
–8–
GENERAL DESCRIPTION
The ADG751 is an SPST switch constructed using switches in a
T configuration to obtain high “OFF” isolation while maintain-
ing good frequency response in the “ON” condition.
Figure 12 shows the T-switch configuration. While the switch is
in the OFF state, the shunt switch is closed and the two series
switches are open. The closed shunt switch provides a signal
path to ground for any of the unwanted signals that find their
way through the off capacitances of the series’ MOS devices.
This results in improved isolation between the input and output
than with an ordinary series switch. When the switch is in the
ON condition, the shunt switch is open and the signal path is
through the two series switches which are now closed.
D
IN
S
SERIES
SHUNT
Figure 12. Basic T-Switch Configuration
LAYOUT CONSIDERATIONS
Where accurate high frequency operation is important, careful
consideration should be given to the printed circuit board layout
and to grounding. Wire wrap boards, prototype boards and
sockets are not recommended because of their high parasitic
inductance and capacitance. The part should be soldered di-
rectly to a printed circuit board. A ground plane should cover all
unused areas of the component side of the board to provide a
low impedance path to ground. Removing the ground planes
from the area around the part reduces stray capacitance.
Good decoupling is important in achieving optimum perfor-
mance. V
DD
should be decoupled with a 0.1 µF surface mount
capacitor to ground mounted as close as possible to the device
itself.
A

ADG751BRT-REEL

Mfr. #:
Manufacturer:
Analog Devices Inc.
Description:
Analog Switch ICs 65dB 150 Ohm 300MHz CMOS RF/Video SPST
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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