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EGP20CHE3/73

P1-P3P4-P5
EGP20A, EGP20B, EGP20C, EGP20D, EGP20F, EGP20G
www.vishay.com
Vishay General Semiconductor
Revision: 17-Jun-16
1
Document Number: 88583
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Glass Passivated Ultrafast Plastic Rectifier
FEATURES
• Superectifier structure for high reliability condition
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency rectification and
freewheeling application in switching mode converters and
inverters for consumer, computer and telecommunication.
MECHANICAL DATA
Case: DO-204AC, molded epoxy over glass body
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
2.0 A
V
RRM
50 V, 100 V, 150 V, 200 V, 300 V, 400 V
I
FSM
75 A
t
rr
50 ns
V
F
0.95 V, 1.25 V
T
J
max. 150 °C
Package DO-204AC (DO-15)
Diode variations Single die
DO-204AC (DO-15)
SUPERECTIFIER
®
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G UNIT
Maximum repetitive peak reverse voltage V
RRM
50 100 150 200 300 400 V
Maximum RMS voltage V
RMS
35 70 105 140 210 280 V
Maximum DC blocking voltage V
DC
50 100 150 200 300 400 V
Maximum average forward rectified current
0.375" (9.5 mm) lead length at T
A
= 55 °C
I
F(AV)
2.0 A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
I
FSM
75 A
Operating and storage temperature range T
J
, T
STG
-65 to +150 °C
EGP20A, EGP20B, EGP20C, EGP20D, EGP20F, EGP20G
www.vishay.com
Vishay General Semiconductor
Revision: 17-Jun-16
2
Document Number: 88583
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
(1)
Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, PCB mounted
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G UNIT
Maximum instantaneous
forward voltage
2.0 A V
F
0.95 1.25 V
Maximum DC reverse
current at rated DC
blocking voltage
T
A
= 25 °C
I
R
5.0
μA
T
A
= 125 °C 100
Maximum reverse
recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
t
rr
50 ns
Typical junction
capacitance
4.0 V, 1 MHz C
J
70 45 pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL EGP20A EGP20B EGP20C EGP20D EGP20F EGP20G UNIT
Typical thermal resistance
R
JA
(1)
40
°C/W
R
JL
(1)
15
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
EGP20D-E3/54 0.452 54 4000 13" Diameter paper tape and reel
EGP20D-E3/73 0.452 73 2000 Ammo pack packaging
0
2.0
3.0
7550250 100 125 150 175
Average Forward Rectied Current (A)
Ambient Temperature (°C)
1.0
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0
15
30
45
60
75
90
1 10010
Number of Cycles at 60 Hz
Peak Forward Surge Current (A)
T
J
= T
J
Max.
8.3 ms Single Half Sine-Wave
EGP20A, EGP20B, EGP20C, EGP20D, EGP20F, EGP20G
www.vishay.com
Vishay General Semiconductor
Revision: 17-Jun-16
3
Document Number: 88583
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Leakage Characteristics
Fig. 5 - Typical Instantaneous Forward Characteristics
Fig. 6 - Typical Reverse Leakage Characteristics
Fig. 7 - Typical Junction Capacitance
Fig. 8 - Typical Transient Thermal Impedance
0.2 0.4 0.6 0.8 1.0 1.2
Instantaneous Forward Voltage (V)
100
10
1
0.1
0.01
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
EGP20A thru EGP20D
0 40608010020
Percent of Peak Reverse Voltage (%)
100
10
1
0.1
0.01
0.001
Instantaneous Reverse Leakage
Current (μA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
EGP20A thru EGP20D
100
10
1
0.1
0.01
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
EGP20F and EGP20G
100
10
1
0.1
0.01
0.001
0 20 40 60 80 100
Percent of Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (μA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 100 °C
EGP20F and EGP20G
0.1 101 100 1000
0
20
40
60
80
100
120
140
Reverse Voltage (V)
Junction Capacitance (pF)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
EGP20A thru EGP20D
EGP20F and EGP20G
0.01
0.1
1
10
100
0.1
1
10
100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
P1-P3P4-P5

EGP20CHE3/73

Mfr. #:
Buy EGP20CHE3/73
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 150 Volt 2.0A 50ns Glass Passivated
Lifecycle:
New from this manufacturer.
Delivery:
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