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KSC2335R

P1-P3P4-P4
©2001 Fairchild Semiconductor Corporation Rev. A1, June 2001
KSC2335
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
* PW≤300µs, Duty Cycle≤10%
Electrical Characteristics
T
C
=25°C unless otherwise noted
* Pulse Test: PW≤350µs, Duty Cycle≤2% Pulsed
h
FE
Classification
Symbol Parameter Value Units
V
CBO
Collector-Base Voltage 500 V
V
CEO
Collector-Emitter Voltage 400 V
V
EBO
Emitter-Base Voltage 7 V
I
C
Collector Current (DC) 7 A
I
CP
*Collector Current (Pulse) 15 A
I
B
Base Current (DC) 3.5 A
P
C
Collector Dissipation (T
a
=25°C) 1.5 W
P
C
Collector Dissipation (T
C
=25°C) 40 W
T
J
Junction Temperature 150 °C
T
STG
Storage Temperature - 55 ~ 150 °C
Symbol Parameter Test Condition Min. Max. Units
V
CEO
(sus) Collector-Emitter Sustaining Voltage I
C
= 3A, I
B1
= 0.6A, L = 1mH 400 V
V
CEX
(sus)1 Collector-Emitter Sustaining Voltage I
C
= 3A, I
B1
= -I
B2
= 0.6A
V
BE
(off) = -5V, L = 180µH, Clamped
450 V
V
CEX
(sus)2 Collector-Emitter Sustaining Voltage I
C
= 6A,I
B1
= 2A, I
B2
= -0.6A
V
BE
(off) = -5V, L = 180µH, Clamped
400 V
I
CBO
Collector Cut-off Current V
CB
= 400V, I
E
= 0 10 µA
I
CER
Collector Cut-off Current V
CE
= 400V, R
BE
= 51Ω @ T
C
=125°C 1mA
I
CEX1
Collector Cut-off Current V
CE
= 400V, V
BE
(off)= -1.5V 10 µA
I
CEX2
Collector Cut-off Current V
CE
= 400V, V
BE
(off)= -1.5V @
T
C
=125°C
1mA
I
EBO
Emitter Cut-off Current V
EB
= 5V, I
C
= 0 10 µA
h
FE
1
h
FE2
h
FE3
* DC Current Gain V
CE
= 5V, I
C
= 0.1A
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 3A
20
20
10
80
80
V
CE
(sat) * Collector-Emitter Saturation Voltage I
C
= 3A, I
B
= 0.6A 1 V
V
BE
(sat) * Base-Emitter Saturation Voltage I
C
= 3A, I
B
= 0.6A 1.2 V
t
ON
Turn ON Time V
CC
=150V, I
C
= 3A
I
B1
= -I
B2
= 0.6A
R
L
= 50Ω
1 µs
t
STG
Storage Time 2.5 µs
t
F
Fall Time 1 µs
Classification R O Y
h
FE2
20 ~ 40 30 ~ 60 40 ~ 80
KSC2335
High Speed, High Voltage Switching
• Industrial Use
1.Base 2.Collector 3.Emitter
1
TO-220
©2001 Fairchild Semiconductor Corporation
KSC2335
Rev. A1, June 2001
Typical Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Derating Curve of Safe Operating Areas
Figure 5. Reverse Bias Safe Operating Area Figure 6. Forward Bias Safe Operating Area
012345
0
1
2
3
4
5
I
B
=0.50A
I
B
=0.45A
I
B
=0.40A
I
B
=0.35A
I
B
=0.30A
I
B
=0.25A
I
B
=0.20A
I
B
=0.15A
I
B
=0.10A
I
B
=0.05A
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
0.01 0.1 1 10
1
10
100
1000
V
CE
= 5 V
Pulsed
h
FE
, DC CURRENT GAIN
Ic[A], COLLECTOR CURRENT
0.01 0.1 1 10
0.01
0.1
1
10
I
C
= 5 I
B
Pulsed
V
CE
(SAT)
V
BE
(SAT)
V
CE
(SAT) [V], V
BE
(SAT) [V], SATURATION VOLTAGE
V
CB
[V], COLLECTOR-BASE VOLTAGE
0 50 100 150 200
0
20
40
60
80
100
120
140
160
Dissipation Limited
S/b Limited
dT [%], I
C
DERATING
T
C
[
o
C], CASE TEMPERATURE
0 100 200 300 400 500
0
2
4
6
8
10
V
CEX
(SUS)
V
CEO
(SUS)
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
1 10 100 1000 10000
1E-3
0.01
0.1
1
10
100
Single Pulse
PW = 10 us
50 us
0.1 ms
0.3 ms
1 ms
10 ms
100 ms
S/b Limited
Dissipation Limoted
I
C
[A], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Package Demensions
©2001 Fairchild Semiconductor Corporation
Rev. A1, June 2001
KSC2335
Dimensions in Millimeters
4.50
±0.20
9.90
±0.20
1.52
±0.10
0.80
±0.10
2.40
±0.20
10.00
±0.20
1.27
±0.10
ø3.60
±0.10
(8.70)
2.80
±0.10
15.90
±0.20
10.08
±0.30
18.95MAX.
(1.70)
(3.70)(3.00)
(1.46)
(1.00)
(45°)
9.20
±0.20
13.08
±0.20
1.30
±0.10
1.30
+0.10
–0.05
0.50
+0.10
–0.05
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
TO-220
P1-P3P4-P4

KSC2335R

Mfr. #:
Buy KSC2335R
Manufacturer:
ON Semiconductor / Fairchild
Description:
Bipolar Transistors - BJT
Lifecycle:
New from this manufacturer.
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