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NTP60N06LG

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 3
1 Publication Order Number:
NTP60N06L/D
NTP60N06L, NTB60N06L
Power MOSFET
60 Amps, 60 Volts,
Logic Level
N−Channel TO−220 and D
2
PAK
Designed for low voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
• Pb−Free Packages are Available
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating Symbol Value Unit
Drain−to−Source Voltage V
DSS
60 Vdc
Drain−to−Gate Voltage (R
GS
= 10 MW)
V
DGR
60 Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t
p
v10 ms)
V
GS
V
GS
"15
"20
Vdc
Drain Current
− Continuous @ T
A
= 25°C
− Continuous @ T
A
100°C
− Single Pulse (t
p
v10 ms)
I
D
I
D
I
DM
60
42.3
180
Adc
Apk
Total Power Dissipation @ T
A
= 25°C
Derate above 25°C
Total Power Dissipation @ T
A
= 25°C (Note 1)
P
D
150
1.0
2.4
W
W/°C
W
Operating and Storage Temperature Range T
J
, T
stg
−55 to
175
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 75 Vdc, V
GS
= 5.0 Vdc,
L = 0.3 mH, I
L
(pk) = 55 A,V
DS
= 60 Vdc)
E
AS
454 mJ
Thermal Resistance,
− Junction−to−Case
− Junction−to−Ambient (Note 1)
R
q
JC
R
q
JA
1.0
62.5
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in
2
).
60 AMPERES, 60 VOLTS
R
DS(on)
= 16 mW
TO−220AB
CASE 221A
STYLE 5
1
2
3
4
N−Channel
D
S
G
MARKING DIAGRAMS
& PIN ASSIGNMENTS
1
2
3
4
D
2
PAK
CASE 418B
STYLE 2
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
NTx60N06L = Device Code
x = B or P
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
NTx60N06LG
AYWW
1
Gate
3
Source
4
Drain
2
Drain
NTx
60N06LG
AYWW
1
Gate
3
Source
4
Drain
2
Drain
NTP60N06L, NTB60N06L
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
60
−
72.8
75.2
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 60 Vdc, V
GS
= 0 Vdc)
(V
DS
= 60 Vdc, V
GS
= 0 Vdc, T
J
=150°C)
I
DSS
−
−
−
−
1.0
10
mAdc
Gate−Body Leakage Current (V
GS
= ± 15 Vdc, V
DS
= 0 Vdc) I
GSS
− − ± 100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.58
5.4
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 2)
(V
GS
= 5.0 Vdc, I
D
= 30 Adc)
R
DS(on)
− 12.4 16
mW
Static Drain−to−Source On−Voltage (Note 2)
(V
GS
= 5.0 Vdc, I
D
= 60 Adc)
(V
GS
= 5.0 Vdc, I
D
= 30 Adc, T
J
= 150°C)
V
DS(on)
−
−
0.793
0.861
1.17
−
Vdc
Forward Transconductance (Note 2) (V
DS
= 8.0 Vdc, I
D
= 12 Adc) g
FS
− 48 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 2195 3075 pF
Output Capacitance
C
oss
− 675 945
Transfer Capacitance C
rss
− 188 380
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
(V
DD
= 48 Vdc, I
D
= 60 Adc,
V
GS
= 5.0 Vdc,
R
G
= 9.1 W) (Note 2)
t
d(on)
− 50.4 100 ns
Rise Time t
r
− 576 1160
Turn−Off Delay Time t
d(off)
− 100 200
Fall Time t
f
− 237 480
Gate Charge
(V
DS
= 48 Vdc, I
D
= 60 Adc,
V
GS
= 5.0 Vdc) (Note 2)
Q
T
− 43.2 65 nC
Q
1
− 6.4 −
Q
2
− 29 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage (I
S
= 60 Adc, V
GS
= 0 Vdc) (Note 2)
(I
S
= 60 Adc, V
GS
= 0 Vdc, T
J
= 150°C)
V
SD
−
−
0.98
0.86
1.05
−
Vdc
Reverse Recovery Time
(I
S
= 60 Adc, V
GS
= 0 Vdc,
dl
S
/dt = 100 A/ms) (Note 2)
t
rr
− 81.9 −
ns
t
a
− 42.1 −
t
b
− 39.8 −
Reverse Recovery Stored Charge Q
RR
− 0.172 −
mC
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
ORDERING INFORMATION
Device Package Shipping
†
NTP60N06L TO−220AB 50 Units / Rail
NTP60N06LG TO−220AB
(Pb−Free)
50 Units / Rail
NTB60N06L
D
2
PAK
50 Units / Rail
NTB60N06LG
D
2
PAK
(Pb−Free)
50 Units / Rail
NTB60N06LT4
D
2
PAK
800 Units / Tape & Reel
NTB60N06LT4G
D
2
PAK
(Pb−Free)
800 Units / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NTP60N06L, NTB60N06L
http://onsemi.com
3
0.03
0.022
0.018
0.01
40200
0.006
12
0
60
0.014
V
DS
= 5 V
80 100
0.026
0
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 10 V
I
D
, DRAIN CURRENT (AMPS)
V
GS
= 10 V
Figure 1. On−Region Characteristics
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
120
60
40
20
53210
Figure 2. Transfer Characteristics
V
GS
, GATE−TO−SOURCE VOLTAGE (VOLTS)
64321
120
60
40
20
0
0
Figure 3. On−Resistance versus Gate−to−Source
Voltage
I
D
, DRAIN CURRENT (AMPS)
0.03
0.022
0.018
0.01
40200
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
0.006
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
2
1.8
1.6
1.4
1.2
1
0.8
1751251007550250−25−50
V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
1000
100
10
0.6
10,000
Figure 6. Drain−to−Source Leakage Current
versus Voltage
I
D
, DRAIN CURRENT (AMPS)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
12060
0.014
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on),
DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
I
DSS
, LEAKAGE (nA)
20 6
0
4
30 40 50
3 V
3.5 V
4 V
8 V
6 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
DS
≥ 10 V
T
J
= 25°C
T
J
= −55°C
T
J
= 100°C
V
GS
= 5 V
I
D
= 30 A
V
GS
= 5 V
T
J
= 150°C
V
GS
= 0 V
T
J
= 100°C
80
100
80
100
5
80 100
150
T
J
= 125°C
4.5 V
5 V
0.026
P1-P3P4-P6P7-P8

NTP60N06LG

Mfr. #:
Buy NTP60N06LG
Manufacturer:
ON Semiconductor
Description:
MOSFET N-CH 60V 60A TO220AB
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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