DMP2305U-7 Datasheet DMP2305U-7 | P1-P3

DMP2305U

Document number: DS31737 Rev. 6 - 2

1 of 6

www.diodes.com

October 2013

DMP2305U

NEW PRODUCT

P-CHANNEL ENHANCEMENT MODE MOSFET

Features

 Low On-Resistance

 60mΩ @ V

= -4.5V

 90mΩ @ V

= -2.5V

 113mΩ @ V

= -1.8V

 Low Input Capacitance

 Fast Switching Speed

 Low Input/Output Leakage

 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

 Halogen and Antimony Free. “Green” Device (Note 3)

 Qualified to AEC-Q101 Standards for High Reliability

 PPAP Capable (Note 4)

Mechanical Data

 Case: SOT23

 Case Material: Molded Plastic, “Green” Molding Compound.

UL Flammability Classification Rating 94V-0

 Moisture Sensitivity: Level 1 per J-STD-020

 Terminals: Finish  Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

 Terminals Connections: See Diagram Below

 Weight: 0.008 grams (approximate)

Ordering Information (Note 4&5)

Part Number Qualification Case Packaging

DMP2305U-7 Standard SOT23 3000/Tape & Reel

DMP2305UQ-7 Automotive SOT23 3000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the

same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/

5. For packaging details, go to our website at http://www.diodes.com/products/packages.html

Marking Information

Date Code Key

Year 2009 2010 2011 2012 2013 2014 2015

Code W X Y Z A B C

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

Top View

Internal Schematic To

View

Source

Gate

Drain

23P = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

M = Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or Y

= Year (ex: A = 2013)

M = Month (ex: 9 = September)

23P

Chengdu A/T Site

Shanghai A/T Site

DMP2305U

Document number: DS31737 Rev. 6 - 2

2 of 6

www.diodes.com

October 2013

DMP2305U

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Units

Drain-Source Voltage

DSS

-20 V

Gate-Source Voltage

GSS

±8 V

Continuous Drain Current (Note 6)

Steady

State

= +25°C

= +70°C

-4.2

-3.4

Pulsed Drain Current (Note 7)

-10 A

Thermal Characteristics

Characteristic Symbol Value Unit

Power Dissipation (Note 6)

1.4 W

Thermal Resistance, Junction to Ambient @T

= 25°C R

θJA

90 °C/W

Operating and Storage Temperature Range

STG

-55 to +150 °C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 8)

Drain-Source Breakdown Voltage

DSS

-20

 

= 0V, I

= -250μA

Zero Gate Voltage Drain Current T

= +25°C I

DSS

 

-1.0 μA

= -20V, V

= 0V

Gate-Source Leakage

GSS

 

±100 nA

= 8V, V

= 0V

ON CHARACTERISTICS (Note 8)

Gate Threshold Voltage

(

)

-0.5 - -0.9 V

= V

, I

= -250μA

Static Drain-Source On-Resistance

DS (ON)



45 60

mΩ

= -4.5V, I

= -4.2A

60 90

= -2.5V, I

= -3.4A

87 113

= -1.8V, I

= -2.0A

Forward Transfer Admittance



= -5V, I

= -4A

DYNAMIC CHARACTERISTICS (Note 9)

Input Capacitance

iss



727



= -20V, V

= 0V

f = 1.0MHz

Output Capacitance

oss



Reverse Transfer Capacitance

rss



Gate Resistance



Ω

= 0V, V

= 0V, f = 1.0MHz

SWITCHING CHARACTERISTICS

Total Gate Charge



7.6



= -4.5V, V

= -4V, I

= -3.5A

Gate-Source Charge



1.4



Gate-Drain Charge



1.2



Turn-On Delay Time

(

)



14.0



= -4V, V

= -4.5V,

= 4Ω, R

= 6Ω, I

= -1A

Turn-On Rise Time



13.0



Turn-Off Delay Time

(

off

)



53.8



Turn-Off Fall Time



23.2



Notes: 6. Device mounted on FR-4 PCB with 2oz. Copper and test pulse width t ≤ 10s.

7. Repetitive rating, pulse width limited by junction temperature.

8. Short duration pulse test used to minimize self-heating effect.

9. Guaranteed by design. Not subject to production testing.

DMP2305U

Document number: DS31737 Rev. 6 - 2

3 of 6

www.diodes.com

October 2013

DMP2305U

NEW PRODUCT

01 2 3 45

Fig. 1 Typical Output Characteristic

V , DRAIN-SOURCE VOLTAGE (V)

I, D

(A)

V = 2.0V

V = 3.0V

V = 4.5V

V = 8V

V = 2.5V

V = 1.5V

0 0.5 1 1.5 2 2.5 3

Fig. 2 Typical Transfer Characteristic

V , GATE-SOURCE VOLTAGE (V)

I, D

AIN

(A)

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = 5V

0.02

0.04

0.06

0.08

0.1

0 5 10 15 20

Fig. 3 Typical On-Resistance

vs. Drain Current and Gate Voltage

I , DRAIN-SOURCE CURRENT (A)

R , DRAIN-SOURCE ON-RESISTANCE ( )

DS(ON)



V = 4.5V

V = 2.5V

0.02

0.04

0.06

0.08

0.1

04 8121620

I , DRAIN CURRENT (A)

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

, D

-S

ESIS

E ( )

DS(ON)



T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = 4.5V

Fig. 5 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

0.6

0.8

1.0

1.2

1.4

, D

AIN-S

ON-RESISTANCE (NORMALIZED)

DSON

1.6

V = 4.5V

I = 10A

V = 2.5V

I = 5A

0.02

0.04

0.06

0.08

0.1

Fig. 6 On-Resistance Variation with Temperature

-50 -25 0 25 50 75 100 125 150

T , AMBIENT TEMPERATURE (°C)

R , DRAIN-SOURCE ON-RESISTANCE ( )

DSON



V = 4.5V

I = 10A

V = 2.5V

I = 5A

P1-P3 P4-P6

DMP2305U-7

Mfr. #:

Buy DMP2305U-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET P-CHANNEL ENHANCEMENT MODE

Lifecycle:

New from this manufacturer.

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