NXP Semiconductors
BYW29E-150
Ultrafast power diode
BYW29E-150 All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 17 September 2013 3 / 10
Symbol Parameter Conditions Min Max Unit
I
RSM
non-repetitive peak reverse
current
t
p
= 100 µs - 0.2 A
T
stg
storage temperature -40 150 °C
T
j
junction temperature - 150 °C
Electrostatic discharge
V
ESD
electrostatic discharge voltage HBM; C = 250 pF; R = 1.5 kΩ - 8 kV
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I
F(AV)
(A)
0 1284
4
8
12
P
tot
(W)
0
δ
= 1
0.5
0.2
0.1
Fig. 1. Forward power dissipation as a function of
average forward current; square waveform;
maximum values
I
F(AV)
(A)
0 862 4
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4
2
6
8
P
tot
(W)
0
a = 1.57
1.9
2.2
2.8
4.0
Fig. 2. Forward power dissipation as a function of
average forward current; sinusoidal waveform;
maximum values
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-mb)
thermal resistance
from junction to
mounting base
Fig. 3 - - 2.7 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 60 - K/W