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AFT09S220-02NR3

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19
4
RF Device Data
Freescale Semiconductor, Inc.
AFT09S220--02NR3
Figure 2. AFT09S220--02NR3 Test Circuit Component Layout
AFT09S220--02N
Rev. 0
D52403
CUT OUT AREA
R2
R3
C1
C6
R1
C21*
C2*
C3
C11*
C7 C8
C22
C13*
C14*
C15*
C18*
C19*
C16*
C20*
C17*
C5*
C12*
C4
C9 C10
C23
V
GG
V
DD
*C2, C5, C11, C12, C13, C14, C15, C16, C17, C18, C19, C20 and C21 are mounted vertically.
Table 7. AFT09S220--02NR3 Test Circuit Component Designations and Values
Part Description Part Number Manufacturer
C1, C2, C3, C4, C5 47 pF Chip Capacitors ATC100B470JT500XT ATC
C6, C7, C8, C9, C10 10 F Chip Capacitors C5750X7S2A106M230KB TDK
C11, C12 6.2 pF Chip Capacitors ATC100B6R2BT500XT ATC
C13, C14, C15, C16 1.7 pF Chip Capacitors ATC100B1R7BT500XT ATC
C17 2.2 pF Chip Capacitor ATC100B2R2JT500XT ATC
C18 2.0 pF Chip Capacitor ATC100B2R0BT500XT ATC
C19 1.1 pF Chip Capacitor ATC100B1R1BT500XT ATC
C20 0.2 pF Chip Capacitor ATC100B0R2BT500XT ATC
C21 6.8 pF Chip Capacitor ATC100B6R8CT500XT ATC
C22, C23 470 F, 63 V Electrolytic Capacitors 477CKS050M Illinois Capacitor
R1 10 , 1/4 W Chip Resistor CRCW120610R0FKEA Vishay
R2, R3 10 k, 1/4 W Chip Resistors CRCW120610K0FKEA Vishay
PCB Rogers RO4350B, 0.020,
r
=3.66 D52403 MTL
AFT09S220--02NR3
5
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS
IRL, INPUT RETURN LOSS (dB)
–12
–4
–6
–8
–10
–14
820
f, FREQUENCY (MHz)
Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression
(PARC) Broadband Performance @ P
out
= 54 Watts Avg.
18.2
20.2
20
19.8
–40
38
36
34
32
–35
–36
–37
–38
D
, DRAIN
EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
19.6
19.4
19.2
19
18.8
18.6
18.4
840 860 880 900 920 940 960 980
30
–39
ACPR (dBc)
Figure 4. Intermodulation Distortion Products
versus Two--Tone Spacing
TWO--TONE SPACING (MHz)
10
–75
0
–15
–30
–60
1 200
IMD, INTERMODULATION DISTORTION (dBc)
–45
Figure 5. Output Peak--to--Average R atio
Compression (PARC) versus Output Power
P
out
, OUTPUT POWER (WATTS)
–1
–3
30
0
–2
–4
OUTPUT COMPRESSION AT 0.01%
PROBABILITY ON CCDF (dB)
20 40 50 70
15
45
40
35
30
25
20
D
DRAIN EFFICIENCY (%)
60
D
ACPR
PARC
ACPR (dBc)
–48
–30
–33
–36
–42
–39
–45
19.6
G
ps
, POWER GAIN (dB)
19.5
19.4
19.3
19.2
19.1
19
G
ps
–5
1
ACPR
D
G
ps
V
DD
=28Vdc,P
out
=54W(Avg.),I
DQ
= 1400 mA
IM5--U
IM7--L
IM7--U
100
–1 dB = 28 W
Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF
–2 dB = 40.2 W
–3 dB = 55 W
IM5--L
IM3--U
–2.8
–2
–2.2
–2.4
–2.6
–3
PARC (dB)
Single--Carrier W--CDMA, 3.84 MHz
Channel Bandwidth, Input Signal
PAR = 9.9 dB @ 0.01% Probability on CCDF
PARC
V
DD
=28Vdc,P
out
= 93 W (PEP)
I
DQ
= 1400 mA, Two--Tone Measurements
(f1 + f2)/2 = Center Frequency of 940 MHz
V
DD
=28Vdc,I
DQ
= 1400 mA, f = 940 MHz
Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth
IRL
IM3--L
6
RF Device Data
Freescale Semiconductor, Inc.
AFT09S220--02NR3
TYPICAL CHARACTERISTICS
1
P
out
, OUTPUT POWER (WATTS) AVG.
Figure 6. Single--Carrier W--CDMA Power Gain, Drain
Efficiency and ACPR versus Output Power
–10
–20
16
22
0
60
50
40
30
20
D
, DRAIN EFFICIENCY (%)
G
ps
, POWER GAIN (dB)
21
20
10 300
10
–60
ACPR (dBc)
19
18
17
0
–30
–40
–50
Figure 7. Broadband Frequency Response
6
24
f, FREQUENCY (MHz)
V
DD
=28Vdc
P
in
=0dBm
I
DQ
= 1400 mA
18
15
12
GAIN (dB)
21
9
500 600 700 800 900 1000 1100 1200 1300
Gain
ACPR
D
G
ps
920 MHz
V
DD
=28Vdc,I
DQ
= 1400 mA
Single--Carrier W--CDMA, 3.84 MHz Channel
Bandwidth, Input Signal PAR = 9.9 dB @
0.01% Probability on CCDF
100
920 MHz
960 MHz
960 MHz
940 MHz
920 MHz
940 MHz
920 MHz
960 MHz
940 MHz
–15
15
10
5
0
–5
–10
IRL (dB)
IRL
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P19

AFT09S220-02NR3

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Buy AFT09S220-02NR3
Manufacturer:
NXP / Freescale
Description:
RF MOSFET Transistors HV9 900MHz 30W OM780-2L
Lifecycle:
New from this manufacturer.
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