1
www.irf.com © 2012 International Rectifier February 18, 2013
Base part number Package Type Standard Pack Orderable Part Number
Form Quantity
IRF7748L1TRPbF DirectFET Large Can Tape and Reel 4000 IRF7748L1TRPbF
Applications
RoHS Compliant, Halogen Free
Lead-Free (Qualified up to 260°C Reflow)
Ideal for High Performance Isolated Converter
Primary Switch Socket
Optimized for Synchronous Rectification
Low Conduction Losses
High Cdv/dt Immunity
Low Profile (<0.7mm)
Dual Sided Cooling Compatible
Compatible with existing Surface Mount Techniques
Industrial Qualified
DirectFET™ Power MOSFET
Fig 1. Typical On-Resistance vs. Gate Voltage
DirectFET™ ISOMETRIC
L6
Ordering Information
V
DSS
V
GS
R
DS(on)
60V min
±20V max
1.7m@ 10V
Q
g tot
Q
gd
V
gs(th)
146nC 40nC 2.9V
D D
G
S
SS
SSS
Applicable DirectFET Outline and Substrate Outline
SB SC M2 M4 L4 L6 L8
Description
The IRF7748L1TRPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packag-
ing to achieve the lowest on-state resistance in a package that has a footprint smaller than a D2PAK and only 0.7 mm profile. The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor
phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods
and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems.
The IRF7748L1TRPbF is optimized for high frequency switching and synchronous rectification applications. The reduced total losses
in the device coupled with the high level of thermal performance enables high efficiency and low temperatures, which are key for sys-
tem reliability improvements, and makes this device ideal for high performance power converters.
Absolute Maximum Ratings
Parameter Max. Units
V
DS
Drain-to-Source Voltage 60
V V
GS
Gate-to-Source Voltage ±20
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 148
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 104
I
D
@ T
A
= 25°C Continuous Drain Current, V
GS
@ 10V (Silicon Limited) 28
A
I
DM
Pulsed Drain Current 592
E
AS
Single Pulse Avalanche Energy 129 mJ
I
AR
Avalanche Current 89 A
Notes
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
TC measured with thermocouple mounted to top (Drain) of part.
Repetitive rating; pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.033mH, R
G
= 50, I
AS
= 89A.
0 25 50 75 100 125 150 175 200
I
D
, Drain Current (A)
1.0
1.5
2.0
2.5
3.0
T
y
p
i
c
a
l
R
D
S
(
o
n
)
(
m
V
GS
= 7V
V
GS
= 6V
V
GS
= 10V
V
GS
= 12V
Fig 2. Typical On-Resistance vs. Drain Current
2 4 6 8 10 12 14 16 18 20
V
GS,
Gate -to -Source Voltage (V)
0
2
4
6
8
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
m
)
I
D
= 89A
T
J
= 25°C
T
J
= 125°C
IRF7748L1TRPbF
Typical values (unless otherwise specified)
