SS22T3

SS22T3G, SS24T3G, NRVBSS24T3G, SBRSS24T3G
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4
Figure 7. Capacitance Figure 8. Typical Operating Temperature Derating*
Figure 9. Thermal Response — Junction to Case
Figure 10. Thermal Response — Junction to Ambient
300
V
R
, REVERSE VOLTAGE (VOLTS)
1000
100
10
V
R
, DC REVERSE VOLTAGE (VOLTS)
25 400
105
85
75
65
C, CAPACITANCE (pF)
T
155.0 10 20 25 35 40 30 355.0 10 2015
95
115
125
, DERATED OPERATING TEMPERATURE ( C)
J
°
* Reverse power dissipation and the possibility of thermal runaway must be considered when operating this device under any re-
verse voltage conditions. Calculations of T
J
therefore must include forward and reverse power effects. The allowable operating
T
J
may be calculated from the equation: T
J
= T
Jmax
r(t)(Pf + Pr) where
r(t) = thermal impedance under given conditions,
Pf = forward power dissipation, and
Pr = reverse power dissipation
This graph displays the derated allowable T
J
due to reverse bias under DC conditions only and is calculated as T
J
= T
Jmax
r(t)Pr,
where r(t) = Rthja. For other power applications further calculations must be performed.
R
tja
= 24°C/W
43°C/W
63°C/W
80°C/W
93°C/W
T
J
= 25°C
0.10.00001
t, TIME (s)
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
R
0.0001 0.001 0.01
, TRANSIENT THERMAL RESISTANCE (NORMALIZED)
T
1.0
10 100 1000
50%
20%
10%
5.0%
2.0%
1.0%
R
tjl(t)
= R
tjl*r(t)
0.10.00001
t, TIME (s)
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
0.0001 0.001 0.01
1.0 10 100 1000
50%
20%
10%
5.0%
2.0%
1.0%
R
tjl(t)
= R
tjl*r(t)
R , TRANSIENT THERMAL RESISTANCE (NORMALIZED)
T
SS22T3G, SS24T3G, NRVBSS24T3G, SBRSS24T3G
www.onsemi.com
5
PACKAGE DIMENSIONS
SMB
CASE 403A03
ISSUE J
E
b
D
c
L1
L
A
A1
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. DIMENSION b SHALL BE MEASURED WITHIN DIMENSION L1.
2.261
0.089
2.743
0.108
2.159
0.085
ǒ
mm
inches
Ǔ
SCALE 8:1
*For additional information on our PbFree strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
SOLDERING FOOTPRINT*
DIM
A
MIN NOM MAX MIN
MILLIMETERS
1.95 2.30 2.47 0.077
INCHES
A1 0.05 0.10 0.20 0.002
b 1.96 2.03 2.20 0.077
c 0.15 0.23 0.31 0.006
D 3.30 3.56 3.95 0.130
E 4.06 4.32 4.60 0.160
L 0.76 1.02 1.60 0.030
0.091 0.097
0.004 0.008
0.080 0.087
0.009 0.012
0.140 0.156
0.170 0.181
0.040 0.063
NOM MAX
5.21 5.44 5.60 0.205 0.214 0.220
H
E
0.51 REF
0.020 REF
D
L1
H
E
POLARITY INDICATOR
OPTIONAL AS NEEDED
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SS22T3

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ON Semiconductor
Description:
DIODE SCHOTTKY 20V 2A SMB
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