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QW-BSC04
REV:A
Comchip Technology CO., LTD.
Company reserves the right to improve product design , functions and reliability without notice.
CDBJSC5650-G
RoHS Device
Maximum Rating ( )at TA=25°C unless otherwise noted
Reverse Voltage: 650 V
Forward Current: 5 A
Dimensions in inches and (millimeter)
Parameter
Unit
Repetitive peak reverse voltage
DC blocking voltage
Typical continuous forward current
Non-repetitive peak forward surge current
Power dissipation
Typical thermal resistance
Operating junction temperature range
Symbol
VRRM
VDC
IF
IFSM
PTOT
RθJC
TJ
650
60
85.8
37.2
1.748
-55 ~ +175
V
V
A
A
W
°C/W
°C
Storage temperature range
TSTG
-55 ~ +175
°C
Value
650
T = 160°Cc
5
Repetitive peak forward surge current
IFRM
30
A
Conditions
Tc = 25°C, tp = 10ms
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
= 25°CTC
TC = 110°C
Junction to case
Surge peak reverse voltage
VRSM
650
V
TO-220-2
0.052(1.32)
0.048(1.23)
0.173(4.40)
0.181(4.60)
0.512(13.00)
0.551(14.00)
0.620(15.75)
0.600(15.25)
0.155(3.93)
0.138(3.50)
0.116(2.95)
0.104(2.65)
0.152(3.85)
0.148(3.75)
0.028(0.70)
0.019(0.49)
0.067(1.70)
0.035(0.88)
0.024(0.61)
0.203(5.15)
0.195(4.95)
0.045(1.14)
0.646(16.40)
Max.
0.311(7.90)
0.303(7.70)
0.409(10.40)
0.394(10.00)
0.260(6.60)
0.244(6.20)
0.107(2.72)
0.094(2.40)
Circuit diagram
K(1) A(2)
K(3)
Features
- Rated to 650V at 5 Amps
- Short recovery time.
- High speed switching possible.
- Temperature independent switching behaviour.
- High temperature operation.
- High frequency operation.
- Positive .temperature coefficient on VF
Silicon Carbide Power Schottky Diode
