IRFP4410ZPBF

IRFP4410ZPbF
www.irf.com 7
Fig 23a. Switching Time Test Circuit
Fig 23b. Switching Time Waveforms
Fig 22b. Unclamped Inductive Waveforms
Fig 22a. Unclamped Inductive Test Circuit
Fig 24a. Gate Charge Test Circuit
Fig 24b. Gate Charge Waveform
Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET
®
Power MOSFETs
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
P.W.
Period
di/dt
Diode Recovery
dv/dt
Ripple 5%
Body Diode Forward Drop
Re-Applied
Voltage
Reverse
Recovery
Current
Body Diode Forward
Current
V
GS
=10V
V
DD
I
SD
Driver Gate Drive
D.U.T. I
SD
Waveform
D.U.T. V
DS
Waveform
Inductor Curent
D =
P. W .
Period
* V
GS
= 5V for Logic Level Devices
*
+
-
+
+
+
-
-
-
R
G
V
DD
dv/dt controlled by R
G
Driver same type as D.U.T.
I
SD
controlled by Duty Factor "D"
D.U.T. - Device Under Test
D.U.T
Inductor Current
1K
VCC
DUT
0
L
S
20K
Vds
Vgs
Id
Vgs(th)
Qgs1
Qgs2QgdQgodr
R
G
I
AS
0.01
t
p
D.U.T
L
V
DS
+
-
V
DD
DRIVER
A
15V
20V
t
p
V
(BR)DSS
I
AS
V
GS
V
DD
V
DS
L
D
D.U.T
+
-
Second Pulse Width < 1µs
Duty Factor < 0.1%
V
DS
V
GS
90%
10%
t
d(off)
t
d(on)
t
f
t
r
IRFP4410ZPbF
8 www.irf.com
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 03/08
TO-247AC packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at
http://www.irf.com/package/
TO-247AC Part Marking Information
TO-247AC Package Outline
Dimensions are shown in millimeters (inches)

IRFP4410ZPBF

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
MOSFET MOSFT 100V 97A 9mOhm 83nC Qg
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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