MUN2115, MMUN2115L, MUN5115, DTA114TE, DTA114TM3, NSBA114TF3
www.onsemi.com
4
Table 2. THERMAL CHARACTERISTICS
Characteristic UnitMaxSymbol
THERMAL CHARACTERISTICS (SOT−1123) (NSBA114TF3)
Total Device Dissipation
T
A
= 25°C (Note 3)
(Note 4)
Derate above 25°C (Note 3)
(Note 4)
P
D
254
297
2.0
2.4
mW
mW/°C
Thermal Resistance, (Note 3)
Junction to Ambient (Note 4)
R
q
JA
493
421
°C/W
Thermal Resistance, Junction to Lead
(Note 3)
R
q
JL
193 °C/W
Junction and Storage Temperature Range T
J
, T
stg
−55 to +150 °C
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 x 1.0 Inch Pad.
3. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
4. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
Table 3. ELECTRICAL CHARACTERISTICS (T
A
= 25°C, unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
− − 100
nAdc
Collector−Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
− − 500
nAdc
Emitter−Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
I
EBO
− − 0.9
mAdc
Collector−Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 − −
Vdc
Collector−Emitter Breakdown Voltage (Note 5)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 − −
Vdc
ON CHARACTERISTICS
DC Current Gain (Note 5)
(I
C
= 5.0 mA, V
CE
= 10 V)
h
FE
160 250 −
Collector−Emitter Saturation Voltage (Note 5)
(I
C
= 10 mA, I
B
= 0.3 mA)
V
CE(sat)
− − 0.25
Vdc
Input Voltage (off)
(V
CE
= 5.0 V, I
C
= 100 mA)
V
i(off)
− 0.6 0.5
Vdc
Input Voltage (on)
(V
CE
= 0.3 V, I
C
= 10 mA)
V
i(on)
1.7 1.2 −
Vdc
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
V
OL
− − 0.2
Vdc
Output Voltage (off)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
V
OH
4.9 − −
Vdc
Input Resistor R1 7.0 10 13
kW
Resistor Ratio R
1
/R
2
− − −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
