STTH4R02BY-TR Datasheet STTH4R02BY-TR, STTH4R02UY, STTH4R02SY | P1-P3

April 2016

DocID17391 Rev 2

1/14

This is information on a product in full production.

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STTH4R02-Y

Automotive ultrafast recovery diode

Datasheet - production data

Features

 Very low conduction losses

 Negligible switching losses

 Low forward and reverse recovery times

 High junction temperature

 PPAP capable

 AEC-Q101 qualified

Description

This device uses ST's new 200 V planar Pt

doping technology, and it is especially suited for

switching mode base drive and transistor circuits.

Packaged in SMB, SMC and DPAK, it is intended

for use in low voltage, high frequency inverters,

freewheeling and polarity protection in

automotive applications.

Table 1: Device summary

Symbol

Value

I

F(AV)

4 A

V

RRM

200 V

T

j

(max.)

175 °C

V

F

(typ.)

0.76 V

t

rr

(typ.)

16 ns

SMB

K

A

SMC

A

K

A

DPAK

K

NC

Characteristics

STTH4R02-Y

2/14

DocID17391 Rev 2

1 Characteristics

Table 2: Absolute ratings (limiting values at 25 °C, unless otherwise specified)

Symbol

Parameter

Value

Unit

V

RRM

Repetitive peak reverse voltage

T

j

= -40 °C to + 175 °C

200

V

I

F(RMS)

Forward rms current

10

A

I

F(AV)

Average forward current

δ = 0.5, square wave

DPAK

T

c

= 160 °C

4

A

SMB, SMC

T

lead

= 95 °C

I

FSM

Surge non repetitive

forward current

t

p

= 10 ms sinusoidal

70

A

T

stg

Storage temperature range

-65 to +175

°C

T

j

Maximum operating junction temperature

(1)

-40 to +175

°C

Notes:

(1)

(dP

tot

/dT

j

) < (1/R

th(j-a)

) condition to avoid thermal runaway for a diode on its own heatsink.

Table 3: Thermal parameters

Symbol

Parameter

Maximum

Unit

R

th(j-c)

Junction to case

DPAK

3.5

°C/W

R

th(j-l)

Junction to lead

SMB, SMC

20

Table 4: Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

R

(1)

Reverse leakage current

T

j

= 25 °C

V

R

= V

RRM

-

3

µA

T

j

= 125 °C

-

2

20

V

F

(2)

Forward voltage drop

T

j

= 25 °C

I

F

= 4 A

-

0.95

1.05

V

T

j

= 150 °C

-

0.76

0.83

Notes:

(1)

Pulse test: t

p

= 5 ms, δ < 2%

(2)

Pulse test: t

p

= 380 µs, δ < 2%

To evaluate the conduction losses use the following equation:

P = 0.67 x I

F(AV)

+ 0.04 I

F

2

(RMS)

STTH4R02-Y

Characteristics

DocID17391 Rev 2

3/14

Table 5: Dynamic characteristics

Symbol

Parameters

Test conditions

Min.

Typ.

Max.

Unit

t

rr

Reverse

recovery time

T

j

= 25 °C

I

F

= 1 A; dI

F

/dt = -50 A/μs;

V

R

= 30 V

-

24

30

ns

I

F

= 1 A; dI

F

/dt = -100 A/μs;

V

R

= 30 V

-

16

20

I

RM

Reverse

recovery

current

T

j

= 125 °C

I

F

= 4 A; dI

F

/dt = -200 A/μs;

V

R

= 160 V

-

4.4

5.5

A

t

rr

Reverse

recovery time

-

27

ns

Q

rr

Reverse

recovery

charges

-

60

nC

1.1 Characteristics (curves)

Figure 1: Peak current versus duty cycle

Figure 2: Forward voltage drop versus forward

current (typical values)

Figure 3: Forward voltage drop versus forward

current (maximum values)

Figure 4: Relative variation of thermal impedance,

junction to case, versus pulse duration

0

5

10

15

20

25

30

35

40

45

50

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

δ

I

M

(A)

T

δ= tp/T

tp

P = 1 W

P = 2 W

P = 5 W

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

I

FM

(A)

T

j

=25°C

T

j

=150°C

V

FM

(V)

1.0E-02

1.0E-01

1.0E+00

1.0E+01

1.0E+02

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

V

FM

(V)

I

FM

(A)

T=25°C

j

T=150°C

j

0.1

1.0

1.E-03 1.E-02 1.E-01 1.E+00

Z

th(j-c)

/R

th(j-c)

t

P

(s)

DPAK

Single pulse

STTH4R02BY-TR

STTH4R02BY-TR

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