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IPB100N06S3-04

P1-P3P4-P6P7-P9
IPB100N06S3-04
IPI100N06S3-04, IPP100N06S3-04
1 Power dissipation 2 Drain current
P
tot
= f(T
C
); V
GS
≥ 6 V I
D
= f(T
C
); V
GS
≥ 6 V
3 Safe operating area 4 Max. transient thermal impedance
I
D
= f(V
DS
); T
C
= 25 °C; D = 0 Z
thJC
= f(t
p
)
parameter: t
p
parameter: D =t
p
/T
1 µs
10 µs
100 µs
1 ms
1
10
100
1000
0.1 1 10 100
V
DS
[V]
I
D
[A]
single pulse
0.01
0.05
0.1
0.5
10
0
10
-1
10
-2
10
-3
10
-4
10
-5
10
-6
10
0
10
-1
10
-2
10
-3
t
p
[s]
Z
thJC
[K/W]
0
50
100
150
200
250
0 50 100 150 200
T
C
[°C]
P
tot
[W]
0
20
40
60
80
100
120
0 50 100 150 200
T
C
[°C]
I
D
[A]
Rev. 1.1 page 4 2007-11-07
IPB100N06S3-04
IPI100N06S3-04, IPP100N06S3-04
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
D
= f(V
DS
); T
j
= 25 °C R
DS(on)
= (I
D
); T
j
= 25 °C
parameter: V
GS
parameter: V
GS
7 Typ. transfer characteristics 8 Typ. drain-source on-state resistance
I
D
= f(V
GS
); V
DS
= 6V R
DS(on)
= f(T
j
); I
D
= 80 A; V
GS
= 10 V
parameter: T
j
2
3
4
5
6
-60 -20 20 60 100 140 180
T
j
[°C]
R
DS(on)
[m
Ω
]
-55 °C
25 °C
175 °C
0
25
50
75
100
125
150
175
200
2345678
V
GS
[V]
I
D
[A]
4.5 V
5 V
5.5 V
6 V
6.5 V
7 V
10 V
0
50
100
150
200
250
02468
V
DS
[V]
I
D
[A]
5 V
5.5 V
6 V
8 V
10 V
0
2
4
6
8
10
12
14
0 20 40 60 80 100 120
I
D
[A]
R
DS(on)
[m
Ω
]
Rev. 1.1 page 5 2007-11-07
IPB100N06S3-04
IPI100N06S3-04, IPP100N06S3-04
9 Typ. gate threshold voltage 10 Typ. capacitances
V
GS(th)
= f(T
j
); V
GS
= V
DS
C = f(V
DS
); V
GS
= 0 V; f = 1 MHz
parameter: I
D
11 Typical forward diode characteristicis 12 Typ. avalanche characteristics
IF = f(V
SD
) I
AS
= f(t
AV
)
parameter: T
j
parameter: T
j(start)
25°C
100°C
150°C
1
10
100
1000
1 10 100 1000
t
AV
[µs]
I
AV
[A]
25 °C
175 °C
10
3
10
2
10
1
10
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4
V
SD
[V]
I
F
[A]
Ciss
Coss
Crss
10
5
10
4
10
3
0 5 10 15 20 25 30
V
DS
[V]
C
[pF]
150µA
1500µA
1
1.5
2
2.5
3
3.5
4
-60 -20 20 60 100 140 180
T
j
[°C]
V
GS(th)
[V]
Rev. 1.1 page 6 2007-11-07
P1-P3P4-P6P7-P9

IPB100N06S3-04

Mfr. #:
Buy IPB100N06S3-04
Manufacturer:
Infineon Technologies
Description:
MOSFET N-Ch 55V 100A D2PAK-2
Lifecycle:
New from this manufacturer.
Delivery:
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Payment:
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