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PMSTA05,115

P1-P3P4-P6P7-P9P10-P10
PMSTA05_06 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 22 July 2010 3 of 9
NXP Semiconductors
PMSTA05; PMSTA06
500 mA NPN general-purpose transistors
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB).
6. Thermal characteristics
[1] Device mounted on an FR4 PCB.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CBO
collector-base voltage open emitter
PMSTA05 - 60 V
PMSTA06 - 80 V
V
CEO
collector-emitter voltage open base
PMSTA05 - 60 V
PMSTA06 - 80 V
V
EBO
emitter-base voltage open collector - 4 V
I
C
collector current - 500 mA
I
CM
peak collector current - 500 mA
I
BM
peak base current - 500 mA
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
-200mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1]
- - 625 K/W
PMSTA05_06 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 22 July 2010 4 of 9
NXP Semiconductors
PMSTA05; PMSTA06
500 mA NPN general-purpose transistors
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
Table 8. Characteristics
T
amb
=25
°
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base
cut-off current
PMSTA05 V
CB
=60V; I
E
= 0 A - - 100 nA
PMSTA06 V
CB
=80V; I
E
= 0 A - - 100 nA
I
EBO
emitter-base
cut-off current
V
EB
=3V; I
C
= 0 A - - 500 nA
h
FE
DC current gain V
CE
=2V; I
C
=10mA 50 - -
V
CE
=1V; I
C
= 100 mA
[1]
50 - -
V
CEsat
collector-emitter
saturation voltage
I
C
=100mA;
I
B
=10mA
[1]
-250mV
V
BEsat
base-emitter
saturation voltage
I
C
=100mA;
I
B
=10mA
[1]
--900mV
V
BE
base-emitter voltage I
C
=100mA; V
CE
=1V - - 1.2 V
f
T
transition frequency V
CE
=2V; I
C
=10mA;
f=100MHz
100 - - MHz
Fig 1. Package outline SOT323 (SC-70)
04-11-04Dimensions in mm
0.45
0.15
1.1
0.8
2.2
1.8
2.2
2.0
1.35
1.15
1.3
0.4
0.3
0.25
0.10
12
3
PMSTA05_06 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 3 — 22 July 2010 5 of 9
NXP Semiconductors
PMSTA05; PMSTA06
500 mA NPN general-purpose transistors
10. Packing information
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
Table 9. Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.
[1]
Type number Package Description Packing quantity
3000 10000
PMSTA05 SOT323 4 mm pitch, 8 mm tape and reel -115 -135
PMSTA06
Fig 2. Reflow soldering footprint SOT323 (SC-70)
Fig 3. Wave soldering footprint SOT323 (SC-70)
solder lands
solder resist
occupied area
solder paste
sot323_
fr
2.65
2.35
0.6
(3×)
0.5
(3×)
0.55
(3×)
1.325
1.85
1.3
3
2
1
Dimensions in mm
sot323_f
w
3.65 2.1
1.425
(3×)
4.6
09
(2×)
2.575
1.8
solder lands
solder resist
occupied area
preferred transport
direction during soldering
Dimensions in mm
P1-P3P4-P6P7-P9P10-P10

PMSTA05,115

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Manufacturer:
Nexperia
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Bipolar Transistors - BJT TRANS GP TAPE-7
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