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IXTA1R6N100D2HV
P1-P3
P4-P5
IXTA1R6N100D2HV
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Fi
g. 7. N
ormal
i
zed R
DS(
on)
v
s. Juncti
on Temperatur
e
0.2
0.6
1.0
1.4
1.8
2.2
2.6
-50
-
25
0
25
50
75
100
125
150
T
J
-
Degr
ees Cen
ti
gr
ade
R
DS
(on)
- No
rma
liz
ed
V
GS
= 0V
I
D
= 0.
8A
Fi
g. 8.
R
DS(
on)
No
r
m
a
li
z
e
d
t
o
I
D
= 0.8A
Val
ue
v
s.
Drai
n Cu
rrent
0.
6
0.
8
1.
0
1.
2
1.
4
1.
6
1.
8
2.
0
2.
2
2.
4
2.
6
00
.
5
11
.
5
22
.
5
3
I
D
- A
mp
e
re
s
R
DS(on
)
- No
rma
liz
e
d
V
GS
= 0V
5V
T
J
= 125
o
C
T
J
= 25
o
C
Fi
g. 9. Input
Admi
ttance
0.0
0.5
1.0
1.5
2.0
2.5
-4
-3.5
-3
-2
.5
-2
-1
.5
-1
-0.5
0
V
GS
- Vo
lts
I
D
- Am
p
e
re
s
T
J
= 125
o
C
25
o
C
- 40
o
C
V
DS
= 30V
Fi
g. 10. Transconductance
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
0
0.5
1
1.5
2
2.5
I
D
- A
mp
e
re
s
g
f s
- S
ie
m
e
n
s
T
J
= - 40
o
C
V
DS
= 30V
25
o
C
125
o
C
Fi
g. 12. Forw
ard V
ol
tage Drop
of I
ntri
nsic D
i
ode
0
1
2
3
4
5
0.3
0.4
0.5
0.6
0.7
0.8
0.9
V
SD
- V
o
lts
I
S
- Am
p
e
re
s
T
J
= 125
o
C
V
GS
= -
10V
T
J
= 25
o
C
Fi
g. 11. Breakdow
n and Thr
eshol
d V
olt
ages
v
s. Juncti
on Temperatur
e
0.8
0.9
1.0
1.1
1.2
1.3
-50
-25
0
25
50
75
100
125
150
T
J
-
Degr
ees Cen
ti
gra
de
BV / V
GS(off)
- No
rma
liz
e
d
V
GS(
o
ff)
@ V
DS
= 25V
BV
DSX
@ V
GS
= - 5
V
© 2017 IXYS CORPORATION, All Rights Reserved
IXYS REF: T_1R6N100D2(2C)8-24-09
IXTA1R6N100D2HV
Fi
g. 17. Maxi
mum Transi
ent Thermal
I
mpedance
0.01
0.10
1.00
10.00
0.00001
0.0001
0.001
0.01
0.1
1
10
Pu
lse Widt
h
-
Secon
ds
Z
(th)JC
- K
/ W
Fi
g. 1
7. Maxi
mum Transi
ent Thermal
I
mpedance
hvjv
2.00
Fi
g.
14. Gate C
harge
-5
-4
-3
-2
-1
0
1
2
3
4
5
0
5
10
15
20
25
Q
G
- Nano
C
o
ul
o
m
b
s
V
GS
- V
o
lts
V
DS
= 500V
I
D
= 0.
8A
I
G
= 1
mA
Fi
g. 13. Capaci
tance
1
10
100
1,000
10,
000
0
5
10
15
20
25
30
3
5
40
V
DS
- V
o
lts
Capaci
t
ance -
PicoFar
ad
s
f
= 1 MHz
C
iss
C
rss
C
oss
Fi
g. 15. Forw
ard-
Bi
as
Safe Op
erati
ng Ar
ea
@ T
C
= 25
o
C
0.01
0.
1
1
10
10
100
1,000
V
DS
- V
o
lts
I
D
-
Amperes
1ms
100
μ
s
R
DS
(on)
Limit
10ms
100ms
DC
T
J
= 15
0
o
C
T
C
= 25
o
C
Sin
g
le P
ulse
Fi
g. 16. Forw
ard-B
i
as Safe Oper
ati
ng Area
@ T
C
= 75
o
C
0.01
0.
1
1
10
10
100
1,000
V
DS
- V
o
lts
I
D
-
Amperes
T
J
= 150
o
C
T
C
= 75
o
C
Sin
g
le P
ulse
25
μ
s
1ms
100
μ
s
R
DS
(on)
Limit
10ms
100ms
DC
P1-P3
P4-P5
IXTA1R6N100D2HV
Mfr. #:
Buy IXTA1R6N100D2HV
Manufacturer:
Littelfuse
Description:
MOSFET DISCMOSFET N-CH DEPL MODE-D2
Lifecycle:
New from this manufacturer.
Delivery:
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