TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/621
Devices Qualified Level
2N7369
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol Value Units
Collector-Emitter Voltage
V
CEO
80 Vdc
Collector-Base Voltage
V
CBO
80 Vdc
Emitter-Base Voltage
V
EBO
7.0 Vdc
Base Current I
B
4.0 Adc
Collector Current
I
C
10 Adc
Total Power Dissipation @ T
C
= +25
0
C
(1)
P
T
115 W
Operating & Storage Junction Temperature Range
T
J
,
T
stg
-65 to +200
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
1.5
0
C/W
1) Derate linearly 0.657 W/
0
C for T
C
> 25
0
C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
C
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
I
C
= 0.2 Adc
V
CEO
(
sus
)
80
Vdc
Collector-Emitter Cutoff Current
V
CE
= 70 Vdc
I
CES
5.0
mAdc
Collector-Emitter Cutoff Current
V
CE
= 80 Vdc, V
BE
= 1.5 Vdc
I
CEX
5.0
mAdc
Emitter-Base Cutoff Current
V
EB
= 7.0 Vdc
I
EBO
5.0
mAdc
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