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VNN3NV04PTR-E

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22
Protection features VNN3NV04P-E, VNS3NV04P-E
10/22 Doc ID 15626 Rev. 5
Figure 4. Switching time test circuit for resistive load
Figure 5. Test circuit for diode recovery times
R
gen
V
gen
V
D
t
I
D
90%
10%
t
V
gen
t
d(on)
t
d(off)
t
f
t
r
L=100uH
A
B
8.5
Ω
V
DD
R
gen
FAST
DIODE
OMNIFET
A
D
I
S
220
Ω
B
OMNIFET
D
S
I
V
gen
VNN3NV04P-E, VNS3NV04P-E Protection features
Doc ID 15626 Rev. 5 11/22
Figure 6. Unclamped inductive load test
circuits
Figure 7. Input charge test circuit
Figure 8. Unclamped inductive waveforms
GEN
ND8003
V
IN
Protection features VNN3NV04P-E, VNS3NV04P-E
12/22 Doc ID 15626 Rev. 5
3.1 Electrical characteristics curves
Figure 9. Thermal impedance for SOT-223 Figure 10. Derating curve
Figure 11. Transconductance Figure 12. Static drain-source on resistance
vs input voltage (part 1/2)
Figure 13. Static drain-source on resistance
vs input voltage (part 2/2)
Figure 14. Source-drain diode forward
characteristics
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5
Id (A)
0
1
2
3
4
5
6
7
8
9
10
11
Gfs (S)
Vds=13V
Tj=25ºC
Tj=150ºC
Tj=-40ºC
3 3.5 4 4.5 5 5.5 6 6.5
Vin(V)
0
25
50
75
100
125
150
175
200
225
250
275
300
Rds(on) (mohms)
Id=3.5A
Id=1A
Id=3.5A
Id=1A
Id=3.5A
Id=1A
Tj=25ºC
Tj=150ºC
Tj=-40ºC
33.544.555.566.5
Vin(V)
0
25
50
75
100
125
150
175
200
225
250
Rds(on) (mohms)
Id=1.5A
Tj=150ºC
Tj=-40ºC
Tj=25ºC
0123456789101112
Id (A)
600
650
700
750
800
850
900
950
1000
1050
1100
Vsd (mV)
Vin=0V
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P18P19-P21P22-P22

VNN3NV04PTR-E

Mfr. #:
Buy VNN3NV04PTR-E
Manufacturer:
STMicroelectronics
Description:
Gate Drivers OMNIFET III Low Side 120mOhm 3.5A 40V
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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