MPSL51
Discrete POWER & Signal
Technologies
PNP General Purpose Amplifier
MPSL51
This device is designed for use as general purpose amplifiers
and switches requiring high voltages. Sourced from Process
74. See 2N5401 for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol Parameter Value Units
V
CEO
Collector-Emitter Voltage 100 V
V
CBO
Collector-Base Voltage 100 V
V
EBO
Emitter-Base Voltage 4.0 V
I
C
Collector Current - Continuous 200 mA
T
J
, T
stg
Operating and Storage Junction Temperature Range -55 to +150
°C
Symbol Characteristic Max Units
MPSL51
P
D
Total Device Dissipation
Derate above 25
°
C
625
5.0
mW
mW/
°
C
R
θ
JC
Thermal Resistance, Junction to Case 83.3 °C/W
R
θ
JA
Thermal Resistance, Junction to Ambient 200 °C/W
C
B
E
TO-92
1997 Fairchild Semiconductor Corporation
