OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

APTC60DSKM24T3G

P1-P3P4-P6P7-P8
APTC60DSKM24T3G
APTC60DSKM24T3G – Rev 2 November, 2017
www.microsemi.com
1
–
8
1413
Q1 Q2
11
18
22 7
3129
CR2
16
R1
19 10
23
32
CR1
15
8
30
All multiple inputs and outputs must be shorted together
Example: 13/14 ; 29/30 ; 22/23 …
All ratings @ T
j
= 25°C unless otherwise specified
Absolute maximum ratings
(per super junction MOSFET)
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Symbol Parameter Max ratings Unit
V
DSS
Drain - Source Voltage 600 V
I
D
Continuous Drain Current
T
c
= 25°C 95
A
T
c
= 80°C 70
I
DM
Pulsed Drain current 260
V
GS
Gate - Source Voltage ±20 V
R
DSon
Drain - Source ON Resistance 24
m
P
D
Power Dissipation T
c
= 25°C 462 W
I
AR
Avalanche current (repetitive and non repetitive) 15 A
E
AR
Repetitive Avalanche Energy 3
mJ
E
AS
Single Pulse Avalanche Energy 1900
Application
AC and DC motor control
Switched Mode Power Supplies
Features
Super junction MOSFET
- Ultra low R
DSon
- Low Miller capacitance
- Ultra low gate charge
- Avalanche energy rated
- Very rugged
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a single
buck of twice the current capability
RoHS Compliant
Dual buck chopper
Super Junction MOSFET
Power Module
V
DSS
= 600V
R
DSon
= 24m max @ Tj = 25°C
I
D
= 95A @ Tc = 25°C
APTC60DSKM24T3G
APTC60DSKM24T3G – Rev 2 November, 2017
www.microsemi.com
2
–
8
Electrical Characteristics (per super junction MOSFET)
Symbol Characteristic Test Conditions Min Typ Max Unit
I
DSS
Zero Gate Voltage Drain Current V
GS
= 0V,V
DS
= 600V 350 µA
R
DS(on)
Drain – Source on Resistance
V
GS
= 10V, I
D
= 47.5A 24
m
V
GS
(
th
)
Gate Threshold Voltage V
GS
= V
DS
, I
D
= 5mA 2.1 3 3.9 V
I
GSS
Gate – Source Leakage Current V
GS
= ±20 V, V
DS
= 0V 200 nA
Dynamic Characteristics
(per super junction MOSFET)
Symbol Characteristic Test Conditions Min Typ Max Unit
C
iss
Input Capacitance
V
GS
= 0V ; V
DS
= 25V
f = 1MHz
14.4
nF
C
oss
Output Capacitance 17
Q
g
Total gate Charge
V
GS
= 10V
V
Bus
= 300V
I
D
= 95A
300
nC
Q
gs
Gate – Source Charge 68
Q
gd
Gate – Drain Charge 102
T
d(on)
Turn-on Delay Time
Inductive Switching (125°C)
V
GS
= 10V
V
Bus
= 400V
I
D
= 95A
R
G
= 2.5
21
ns
T
r
Rise Time 30
T
d(off)
Turn-off Delay Time 100
T
f
Fall Time 45
E
on
Turn-on Switching Energy
Inductive switching @ 25°C
V
GS
= 10V ; V
Bus
= 400V
I
D
= 95A ; R
G
= 2.5
1350
µJ
E
off
Turn-off Switching Energy 1040
E
on
Turn-on Switching Energy
Inductive switching @ 125°C
V
GS
= 10V ; V
Bus
= 400V
I
D
= 95A ; R
G
= 2.5
2200
µJ
E
off
Turn-off Switching Energy 1270
R
thJC
Junction to Case Thermal Resistance 0.27 °C/W
Chopper diode ratings and characteristics
(per diode)
Symbol Characteristic Test Conditions Min Typ Max Unit
V
RRM
Peak Repetitive Reverse Voltage 600 V
I
RM
Reverse Leakage Current V
R
=600V 100 µA
I
F
DC Forward Current
T
c
= 80°C 100 A
V
F
Diode Forward Voltage
I
F
= 100A 1.6 2
V
I
F
= 200A 2
I
F
= 100A T
j
= 125°C
1.3
t
rr
Reverse Recovery Time
I
F
= 100A
V
R
= 400V
di/dt=200A/µs
T
j
= 25°C 160
ns
T
j
= 125°C 220
Q
rr
Reverse Recovery Charge
T
j
= 25°C 290
nC
T
j
= 125°C 1530
R
thJC
Junction to Case Thermal Resistance 0.55 °C/W
APTC60DSKM24T3G
APTC60DSKM24T3G – Rev 2 November, 2017
www.microsemi.com
3
–
8
Thermal and package characteristics
Symbol Characteristic Min Max Unit
V
ISOL
RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz 4000 V
T
J
Operating junction temperature range
-40 150
°C
T
JOP
Recommended junction temperature under switching conditions -40 T
J
max -25
T
STG
Storage Temperature Range -40 125
T
C
Operating Case Temperature -40 125
Torque Mounting torque To heatsink M4 2 3 N.m
Wt Package Weight 110 g
Temperature sensor NTC
(see application note APT0406 on www.microsemi.com for more information).
Symbol Characteristic Min Typ Max Unit
R
25
Resistance @ 25°C 50
k
∆R
25
/R
25
5
%
B
25/85
T
25
= 298.15 K 3952
K
∆B/B T
C
=100°C 4
%
TT
B
R
R
T
11
exp
25
85/25
25
Package outline (dimensions in mm)
See application note 1906 - Mounting Instructions for SP3F Power Modules on www.microsemi.com
T: Thermistor temperature
R
T
: Thermistor value at T
P1-P3P4-P6P7-P8

APTC60DSKM24T3G

Mfr. #:
Buy APTC60DSKM24T3G
Manufacturer:
Microchip / Microsemi
Description:
Discrete Semiconductor Modules Power Module - Coolmos
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet