IXTA24P085T Datasheet IXTP24P085T, IXTA24P085T | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25°C to 150°C - 85 V

V

DGR

T

J

= 25°C to 150°C, R

GS

= 1MΩ - 85 V

V

GSS

Continuous ±15 V

V

GSM

Transient ±25 V

I

D25

T

C

= 25°C - 24 A

I

DM

T

C

= 25°C, Pulse Width Limited by T

JM

- 80 A

I

A

T

C

= 25°C - 24 A

E

AS

T

C

= 25°C 200 mJ

P

D

T

C

= 25°C83W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6mm (0.062 in.) from Case for 10s 300 °C

T

SOLD

Plastic Body for 10s 260 °C

M

d

Mounting Torque (TO-220) 1.13/10 Nm/lb.in.

Weight TO-220 3.0 g

TO-263 2.5 g

DS99969B(01/13)

TrenchP

TM

Power MOSFETs

P-Channel Enhancement Mode

Avalanche Rated

IXTA24P085T

IXTP24P085T

V

DSS

= - 85V

I

D25

= - 24A

R

DS(on)

≤≤

≤ 65m

ΩΩ

Ω

G = Gate D = Drain

S = Source Tab = Drain

TO-263 AA (IXTA)

G

S

D (Tab)

G

D

S

TO-220AB (IXTP)

D (Tab)

Features

z

International Standard Packages

z

Avalanche Rated

z

Extended FBSOA

z

Fast Intrinsic Diode

z

Low R

DS(ON)

and Q

G

Advantages

z

Easy to Mount

z

Space Savings

z

High Power Density

Applications

z

High-Side Switching

z

Push Pull Amplifiers

z

DC Choppers

z

Automatic Test Equipment

z

Current Regulators

z

Battery Charger Applications

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

DSS

V

GS

= 0V, I

D

= - 250μA - 85 V

V

GS(th)

V

DS

= V

GS

, I

D

= - 250μA - 2.5 - 4.5 V

I

GSS

V

GS

= ±15V, V

DS

= 0V ±50 nA

I

DSS

V

DS

= V

DSS

,

V

GS

= 0V - 3 μA

T

J

= 125°C -100 μA

R

DS(on)

V

GS

= -10V, I

D

= 0.5 • I

D25

, Note 1 65 mΩ

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA24P085T

IXTP24P085T

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

V

DS

= -10V, I

D

= 0.5 • I

D25

, Note 1 10 16 S

C

iss

2090 pF

C

oss

V

GS

= 0V, V

DS

= - 25V, f = 1MHz 243 pF

C

rss

117 pF

t

d(on)

18 ns

t

r

26 ns

t

d(off)

53 ns

t

f

26 ns

Q

g(on)

41 nC

Q

gs

V

GS

= -10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

17 nC

Q

gd

11 nC

R

thJC

1.5 °C/W

R

thCS

TO-220 0.50 °C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

I

S

V

GS

= 0V - 24 A

I

SM

Repetitive, Pulse Width Limited by T

JM

- 96 A

V

SD

I

F

= - 24A, V

GS

= 0V, Note 1 -1.5 V

t

rr

40 ns

Q

RM

72 nC

I

RM

- 3.6 A

Resistive Switching Times

V

GS

= -10V, V

DS

= 0.5 • V

DSS

, I

D

= 0.5 • I

D25

R

G

= 10Ω (External)

I

F

= -12A, -di/dt = -100A/μs

V

R

= - 43V, V

GS

= 0V

Pins: 1 - Gate 2 - Drain

3 - Source

TO-220 Outline

TO-263 Outline

Pins:

1 - Gate

2,4 - Drain

3 - Source

IXTA24P085T

IXTP24P085T

Fig. 1. Output Characteristics @ T

J

= 25ºC

-24

-20

-16

-12

-8

-4

0

-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 8V

- 5

V

- 6

V

- 7

V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

-100

-90

-80

-70

-60

-50

-40

-30

-20

-10

0

-20-18-16-14-12-10-8-6-4-20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 5

V

- 6

V

- 7

V

- 8

V

- 9

V

Fig. 3. Output Characteristics @ T

J

= 125ºC

-24

-20

-16

-12

-8

-4

0

-2.4-2.2-2-1.8-1.6-1.4-1.2-1-0.8-0.6-0.4-0.20

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 9V

- 8V

- 6V

- 5V

- 7V

Fig. 4. R

DS(on)

Normalized to I

D

= -12A Value vs.

Junction Temperature

0.6

0.8

1.0

1.2

1.4

1.6

1.8

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= -10V

I

D

= - 24A

I

D

= -12A

Fig. 5. R

DS(on)

Normalized to I

D

= -12A Value vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

-84-72-60-48-36-24-120

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= -10V

T

J

= 25ºC

T

J

= 125ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

-28

-24

-20

-16

-12

-8

-4

0

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXTA24P085T

IXTA24P085T

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