2
MSA-0420 Absolute Maximum Ratings
Parameter Absolute Maximum
[1]
Device Current 120 mA
Power Dissipation
[2,3]
850 mW
RF Input Power +13 dBm
Junction Temperature 200°C
Storage Temperature –65 to 200°C
Thermal Resistance
[2,4]
:
θ
jc
= 40°C/W
G
P
Power Gain (|S
21
|
2
) f = 0.1 GHz dB 7.5 8.5 9.5
∆G
P
Gain Flatness f = 0.1 to 2.5 GHz dB ±0.6 ±1.0
f
3 dB
3 dB Bandwidth GHz 4.3
Input VSWR f = 0.1 to 2.5 GHz 1.7:1
Output VSWR f = 0.1 to 2.5 GHz 1.8:1
NF 50 Ω Noise Figure f = 1.0 GHz dB 6.5
P
1 dB
Output Power at 1 dB Gain Compression f = 1.0 GHz dBm 14.0 16.0
IP
3
Third Order Intercept Point f = 1.0 GHz dBm 30.0
t
D
Group Delay f = 1.0 GHz psec 140
V
d
Device Voltage V 5.7 6.3 6.9
dV/dT Device Voltage Temperature Coecient mV/°C –8.0
Note:
1. The recommended operating current range for this device is 40 to 110 mA. Typical performance as a function of current is on the following
page.
Electrical Specications
[1]
, T
A
= 25°C
Symbol Parameters and Test Conditions: I
d
= 90 mA, Z
O
= 50 Ω Units Min. Typ. Max.
VSWR
Notes:
1. Permanent damage may occur if any of these limits are exceeded.
2. T
CASE
= 25°C.
3. Derate at 25 mW/°C for T
C
> 166°C.
4. The small spot size of this technique results in a higher, though more accurate determination
of q
jc
than do alternate methods.