BB208-03,135

1. Product profile
1.1 General description
The BB208-02 is a planar technology variable capacitance diode in a SOD523 (SC-79)
ultra small SMD plastic package.
The BB208-03 is a planar technology variable capacitance diode in a SOD323 (SC-76)
very small SMD plastic package.
1.2 Features and benefits
Very small SMD plastic packages
Very low series resistance
Excellent CV linearity
C
d(1V)
: 21.5 pF; C
d(7.5V)
: 4.9 pF
High ratio.
1.3 Applications
Voltage Controlled Oscillators (VCO)
Voltage Controlled Crystal Oscillators/Temperature Controlled Crystal Oscillators
(VCXO/TCXO).
2. Pinning information
BB208-02; BB208-03
Low voltage variable capacitance diode
Rev. 2 — 8 September 2011 Product data sheet
Table 1. Discrete pinning: SOD523
Pin Description Simplified outline Symbol
1 cathode
2 anode
Table 2. Discrete pinning: SOD323
Pin Description Simplified outline Symbol
1 cathode
2 anode
21
sym008
21
sym008
BB208-02; BB208-03 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 September 2011 2 of 9
NXP Semiconductors
BB208-02; BB208-03
Low voltage variable capacitance diode
3. Ordering information
4. Marking
5. Limiting values
6. Characteristics
Table 3. Ordering information
Type number Package
Name Description Version
BB208-02 - plastic surface mounted package; 2 leads SOD523
BB208-03 - plastic surface mounted package; 2 leads SOD323
Table 4. Marking
Type number Marking code
BB208-02 A1
BB208-03 A2
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
continuous reverse voltage - 10 V
I
F
continuous forward current - 20 mA
T
stg
storage temperature 55 +150 C
T
j
operating junction temperature 55 +125 C
Table 6. Electrical characteristics
T
j
=25
C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
R
reverse current V
R
=10V; see Figure 2 - - 10 nA
V
R
=10V; T
j
=85C; see Figure 2 --200nA
r
s
diode series resistance f = 100 MHz; V
R
= 3 V - 0.35 0.5
C
d
diode capacitance f = 1 MHz; see Figure 1 and Figure 3
V
R
= 1 V 19.9 - 23.2 pF
V
R
= 4 V - 10.1 - pF
V
R
= 7.5 V 4.5 - 5.4 pF
capacitance ratio f = 1 MHz 2.0 - -
capacitance ratio f = 1 MHz 3.7 - 5.2
C
d1V
C
d4V
----------------
C
d1V
C
d 7.5V
-------------------
BB208-02; BB208-03 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 2 — 8 September 2011 3 of 9
NXP Semiconductors
BB208-02; BB208-03
Low voltage variable capacitance diode
f=1MHz; T
j
=25C.
Fig 1. Diode capacitance as a function of reverse voltage; typical values.
Fig 2. Reverse current as a function of junction
temperature; typical values.
Fig 3. Temperature coefficient of diode capacitance
as a function of reverse voltage; typical
values.
001aaa524
10
20
30
C
d
(pF)
0
V
R
(V)
10
1
10
2
101
mlc816
10
2
10
10
3
I
R
(nA)
1
T
j
(°C)
0 1008040 6020
001aaa525
V
R
(V)
10
1
10
2
101
10
4
10
3
TC
d
(K
-1
)
10
5

BB208-03,135

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
Varactor Diodes TAPE7 DIO-RFSS
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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