CUS03(TE85L,Q,M)

CUS03
2018-07-02
1
TOSHIBA Schottky Barrier Diode
CUS03
Switching Mode Power Supply Applications
Portable Equipment Battery Applications
Repetitive peak reverse voltage : V
RRM
= 40 V
Average forward current : I
F (AV)
= 0.7 A
Peak forward voltage : V
FM
= 0.52 V@I
F
= 0.7 A
Suitable for high-density board assembly due to the use of a small
Toshiba Nickname: US−FLAT
TM
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics Symbol Rating Unit
Repetitive peak reverse voltage V
RRM
40 V
Average forward current I
F (AV)
0.7 (Note 1)
A
Non-repetitive peak forward surge current
I
FSM
20 (50 Hz) A
Junction temperature T
j
40 to 150 °C
Storage temperature range T
stg
40 to 150 °C
Note 1: Ta = 53°C: Device mounted on a glass-epoxy board
Board size : 50 mm × 50 mm,
Soldering land size : 6 mm × 6 mm
Rectangular waveform (α = 180°), V
R
= 20 V
Note 2: Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics
(Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Peak forward voltage
V
FM (1)
I
FM
= 0.1 A (pulse test) 0.37
V
V
FM (2)
I
FM
= 0.7 A (pulse test) 0.48 0.52
Repetitive peak reverse current
I
RRM (1)
V
RRM
= 5 V (pulse test) 0.4
μA
I
RRM (2)
V
RRM
= 40 V (pulse test) 3.0 100
Junction capacitance C
j
V
R
= 10 V, f = 1.0 MHz 45 pF
Thermal resistance
(junction to ambient)
R
th (j-a)
Device mounted on a ceramic board
board size 50 mm × 50 mm
soldering land size 2 mm × 2 mm
board thickness 0.64 mm
75
°C/W
Device mounted on a glass-epoxy board
board size 50 mm × 50 mm
soldering land size 6 mm × 6 mm
board thickness 1.6 mm
150
Thermal resistance (junction to lead) R
th (j-ℓ)
Junction to lead of cathode side 30 °C/W
Unit
: mm
ANODE
CATHODE
0.13
1.9 ± 0.1
2.5 ± 0.2
0 ~ 0.05
0.5 ± 0.1
+ 0.2
0.1
1.25
0.88 ± 0.1
0.6 ± 0.1
1.4 ± 0.2
0.88 ± 0.
1
0.78 ± 0.1
+
0.05
0.03
JEDEC
JEITA
TOSHIBA 3-2B1S
Weight: 0.004 g (typ.)
Start of commercial production
2003-11
CUS03
2018-07-02
2
Marking
Abbreviation Code Part No.
3 CUS03
Land pattern dimensions for reference only
Handling Precaution
1) Schottky barrier diodes have reverse current characteristics compared to other diodes.
There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage.
Please take forward and reverse loss into consideration during design.
2) The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be
exceeded during operation, even for an instant. The following are the general derating methods that we
recommend for designing a circuit using this device.
V
RRM
: Use this rating with reference to (1) above. V
RRM
has a temperature coefficient of 0.1%/°C. Take
this temperature coefficient into account when designing a device at low temperature.
I
F (AV)
: We recommend that the worst-case current be no greater than 80% of the absolute maximum
rating of
I
F (AV)
and T
j
be below 12C. When using this device, please take the margin into consideration
by using an allowable Ta max-I
F (AV)
curve.
I
FSM
: This rating specifies the non-repetitive peak current. This is only applied for an abnormal
operation, which seldom occurs during the lifespan of the device.
T
j
: Derate this rating when using a device to ensure high reliability.
We recommend that the device be used at T
j
below 120°C.
3) Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition.
When using a device, design a circuit board and a soldering land size to match the appropriate thermal
resistance value.
4) For other design considerations, see the Toshiba website.
2.0
1.1
Unit: mm
0.5
0.8
0.8
CUS03
2018-07-02
3
Forward voltage V
F
(V)
I
F
– V
F
Forward current
I
F
(A)
Average forward current I
F (AV)
(A)
P
F (AV)
– I
F (AV)
Average forward power dissipation
P
F (AV)
(W)
Average forward current I
F (AV)
(A)
Ta max – I
F (AV)
Maximum allowable ambient temperature
Ta max (°C)
Average forward current I
F (AV)
(A)
Tℓ max – I
F (AV)
Maximum allowable lead temperature
Tℓ max (°C)
160
0
0 0.2 0.4 0.6 1.0
80
20
40
100
120
0.8 1.2
140
180°
120°
DC
α = 60°
60
Rectangular
waveform
α
360°
Conduction
angle: α
V
R
= 20 V
I
F (AV)
Maximum allowable ambient temperature
Ta max (°C)
Average forward current I
F (AV)
(A)
Ta max – I
F (AV)
Time t (s)
r
th (j-a)
– t
0
0
160
0.2 0.4 0.6 1.0
60
20
40
80
100
0.8 1.2
120
DC
α = 60°
140
120°
180°
0.01
0
75°C
25°C
T
j
= 150°C
10
1
0.1
0.2
0.4 0.6 0.8 1.2
100°C
1.0
0.5
0
0 0.2 0.4 0.6 1.0 0.8 1.2
0.3
0.1
0.2
0.4
180°
120°
DC
α = 60°
Rectangular
waveform
α
360°
Conduction
angle: α
V
R
= 20 V
I
F (AV)
0
0
160
0.2 0.4 0.6 1.0
60
20
40
80
100
0.8 1.2
120
DC
α = 60°
140
120°
180°
Rectangular
waveform
α
360°
Conduction
angle: α
Transient thermal resistance
r
th (j-a)
C/W)
Rectangular
waveform
α
360°
Conduction
angle: α
V
R
= 20 V
I
F (AV)
Pulse test
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land size: 6 mm × 6 mm
board thickness: 1.6 mm
Device mounted on a ceramic board:
board size: 50 mm × 50 mm
Soldering land size: 2 mm × 2 mm
board thickness: 0.64 mm
1
0.001
10
100
1000
0.01
0.1
1
10
100
1000
Device mounted on a ceramic board:
board size : 50 mm × 50 mm
Soldering land size: 2 mm × 2 mm
board thickness: 0.64 mm
Device mounted on a glass-epoxy board:
board size: 50 mm × 50 mm
Soldering land size : 6 mm × 6 mm
board thickness: 1.6 mm

CUS03(TE85L,Q,M)

Mfr. #:
Manufacturer:
Toshiba
Description:
Schottky Diodes & Rectifiers 30V Vrrm 1.0A IF 20A 0.52V VFM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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