1SS306
2015-06-08
TOSHIBA Diode Silicon Epitaxial Planar Type
1SS306
High Voltage, High Speed Switching Applications
Small package : SC-61
Low forward voltage : V
F (2)
= 0.90 V (typ.)
Fast reverse recovery time : t
rr
= 30 ns (typ.)
Small total capacitance : C
T
= 1.5 pF (typ.)
Absolute Maximum Ratings
(Ta = 25
°C
)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage V
RM
250 V
Reverse voltage V
R
200 V
Maximum (peak) forward current I
FM
300 (*) mA
Average forward current I
O
100 (*) mA
Surge current (10 ms) I
FSM
2 (*) A
Power dissipation P 150 mW
Junction temperature T
j
125 °C
Storage temperature T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
*: Unit rating. Total rating = unit rating × 1.5
Electrical Characteristics
(Ta = 25
°C
)
Characteristic Symbol Test Condition Min Typ. Max Unit
Forward voltage
V
F (1)
I
F
= 10 mA ― 0.72 1.0
V
V
F (2)
I
F
= 100 mA ― 0.9 1.2
Reverse current
I
R (1)
V
R
= 50 V ― ― 0.1
μA
I
R (2)
V
R
= 200 V ― ― 1.0
Total capacitance C
T
V
R
= 0 V, f = 1 MHz ― 1.5 3.0
pF
Reverse recovery time t
rr
I
F
= 10mA, Fig.1 ― 30 60
ns
Start of commercial production
1986-10
