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NUP2115LT3G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2005
October, 2016 − Rev. 3
1 Publication Order Number:
NUP2115L/D
NUP2115L, SZNUP2115L
Dual Line FlexRay
Bus Protector
The SZ/NUP2115L has been designed to protect the FlexRay
transceiver from ESD and other harmful transient voltage events. This
device provides bidirectional protection for each data line with a
single compact SOT−23 package, giving the system designer a low
cost option for improving system reliability and meeting stringent
EMI requirements.
Features
• 200 W Peak Power Dissipation per Line (8/20 ms Waveform)
• Diode Capacitance Matching
• Low Reverse Leakage Current (< 100 nA)
• Low Capacitance High−Speed FlexRay Data Rates
• IEC Compatibility: − IEC 61000−4−2 (ESD): Level 4
− IEC 61000−4−4 (EFT): 50 A – 5/50 ns
− IEC 61000−4−5 (Lighting) 3.0 A (8/20 ms)
• ISO 7637−1, Nonrepetitive EMI Surge Pulse 2, 8.0 A
(1/50 ms)
• ISO 7637−3, Repetitive Electrical Fast Transient (EFT)
EMI Surge Pulses, 50 A (5/50 ns)
• Flammability Rating UL 94 V−0
• SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
• These are Pb−Free Devices
Applications
• Automotive Networks
♦ FlexRay Bus
www.onsemi.com
SOT−23
CASE 318
STYLE 27
PIN 1
PIN 3
PIN 2
MARKING DIAGRAM
25W = Device Code
M = Date Code
G = Pb−Free Package
SOT−23
DUAL BIDIRECTIONAL
VOLTAGE SUPPRESSOR
200 W PEAK POWER
1
25WMG
G
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
NUP2115L, SZNUP2115L
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C, unless otherwise specified)
Symbol
Rating Value Unit
PPK
Peak Power Dissipation, 8 x 20 ms Double Exponential Waveform (Note 1)
200 W
T
J
Operating Junction Temperature Range −55 to 150 °C
T
J
Storage Temperature Range −55 to 150 °C
T
L
Lead Solder Temperature (10 s) 260 °C
ESD Human Body Model (HBM)
Machine Model (MM)
IEC 61000−4−2 Specification (Contact)
8.0
400
30
kV
V
kV
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Non−repetitive current pulse per Figure 1.
ELECTRICAL CHARACTERISTICS (T
J
= 25°C, unless otherwise specified)
Symbol Parameter Test Conditions Min Typ Max Unit
V
RWM
Reverse Working Voltage (Note 2) 24 − − V
V
BR
Breakdown Voltage I
T
= 1 mA (Note 3) 26.2 − 32 V
I
R
Reverse Leakage Current V
RWM
= 24 V − 15 100 nA
V
C
Clamping Voltage
I
PP
= 1 A (8/20 ms Waveform)
(Note 4)
− 33.4 36.6 V
V
C
Clamping Voltage
I
PP
= 3 A (8/20 ms Waveform)
(Note 4)
− 44 50 V
I
PP
Maximum Peak Pulse Current
8/20 ms Waveform (Note 4)
− − 3.0 A
C
J
Capacitance V
R
= 0 V, f = 1 MHz (Line to GND) − − 10 pF
DC
Diode Capacitance Matching V
R
= 0 V, 5 MHz (Note 5) − 0.1 2 %
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. TVS devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater than the DC
or continuous peak operating voltage level.
3. V
BR
is measured at pulse test current I
T
.
4. Pulse waveform per Figure 1.
5. DC is the percentage difference between C
J
of lines 1 and 2 measured according to the test conditions given in the electrical characteristics
table.
ORDERING INFORMATION
Device Package Shipping
†
NUP2115LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
SZNUP2115LT1G SOT−23
(Pb−Free)
3,000 / Tape & Reel
NUP2115LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
SZNUP2115LT3G SOT−23
(Pb−Free)
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
NUP2115L, SZNUP2115L
www.onsemi.com
3
TYPICAL PERFORMANCE CURVES
(T
J
= 25°C unless otherwise noted)
Figure 1. Pulse Waveform, 8 × 20 ms
110
90
80
70
60
50
40
30
20
10
0
0 5 15 25
t, TIME (ms)
% OF PEAK PULSE CURRENT
WAVEFORM
PARAMETERS
t
r
= 8 ms
t
d
= 20 ms
t
d
= I
PP
/2
30
Figure 2. Clamping Voltage vs Peak Pulse Current
3.5
2.5
2.0
1.5
1.0
0.5
0.0
40
V
C
, CLAMPING VOLTAGE (V)
I
PP
, PEAK PULSE CURRENT (A)
30 35 45 50
100
10 20
c−t
Figure 3. Typical Junction Capacitance vs
Reverse Voltage
5
05
V
R
, REVERSE VOLTAGE (V)
C, CAPACITANCE (pF)
10 15 20 25
125°C
4
3
9
2
6
25°C
0
5
10
15
20
25
30
35
40
45
50
20 22 24 26 28 30 32 34
Figure 4. V
BR
versus I
T
Characteristics
T
A
= −55°C
125°C
25°C
65°C
V
BR
, VOLTAGE (V)
I
T
, (mA)
Figure 5. I
R
versus Temperature Characteristics
0
5
10
15
20
25
012345
−55°C
T
A
= +150°C
+25°C
I
L
, LEAKAGE CURRENT (nA)
V
R
, REVERSE BIAS VOLTAGE (V)
0
20
40
60
80
100
120
−60 −30 0 30 60 90 120 150 180
Figure 6. Temperature Power Dissipation Derating
TEMPERATURE (°C)
PERCENT DERATING (%)
3.0
7
8
P1-P3P4-P5

NUP2115LT3G

Mfr. #:
Buy NUP2115LT3G
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors ESD PROTECTION
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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