BFQ31ATA

SOT23 NPN SILICON PLANAR

VHF/UHF TRANSISTOR

ISSUE 4 – MARCH 2001

PARTMARKING DETAILS

BFQ31A – S4

BFQ31AR – S5

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

30 V

Collector-Emitter Voltage V

CEO

15 V

Emitter-Base Voltage V

EBO

3V

Continuous Collector Current I

C

100 mA

Base Current I

B

50 mA

Power Dissipation at T

amb

=25°C P

tot

330 mW

Operating and Storage Temperature Range T

j

:T

stg

-55 to +150 °C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER SYMBOL BFQ31A UNIT CONDITIONS.

MIN. MAX.

Collector-Base

Breakdown Voltage

V

(BR)CBO

30 V

I

C

=1.0µA, I

E

=0

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

15 V I

C

=3mA, I

B

=0*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

3V

I

E

=10µA, I

C

=0

Collector Cut-Off

Current

I

CBO

0.01

µA

V

CB

=15V, I

E

=0

Collector-Emitter

Saturation Voltage

V

CE(sat)

0.4 V I

C

=10mA, I

B

=1mA

Base-Emitter

Saturation Voltage

V

BE(sat)

1.0 V I

C

=10mA, I

B

=1mA

Static Forward Current

Transfer Ratio

h

FE

100 I

C

=3mA, V

CE

=1V

Transition

Frequency

f

T

600 MHz I

C

=4mA, V

CE

=10V

f=100MHz

Output Capacitance C

obo

1.7 pF V

CB

=10V, f=1MHz

Input Capacitance C

ibo

2.0 pF V

CB

=0.5V, f=1MHz

Noise Figure N 6.0 dB I

C

=1mA, V

CE

=6V

R

s

=400Ω, f=60MHz

*Measured under pulsed conditions.

Spice parameter data is available upon request for this device

BFQ31A

C

B

E

TBA

BFQ31ATA

Mfr. #:

Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT NPN RF

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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BFQ31ATA