IRF7422D2TR

P1-P3 P4-P6 P7-P8

IRF7422D2

4 www.irf.com

Fig 8. Maximum Safe Operating Area

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 7. Typical Source-Drain Diode

Forward Voltage

Power Mosfet Characteristics

0

500

1000

1500

1 10 100

C, Capacitance (pF)

A

DS

-V , Drain-to-Source Voltage (V)

V = 0V, f = 1MHz

C = C + C , C SHORTED

C = C

C = C + C

GS

iss gs gd ds

rss gd

oss ds gd

C

iss

C

oss

C

rss

0

2

4

6

8

10

0 5 10 15 20 25

G

GS

A

FOR TEST CIRCUIT

SEE FIGURE 12

-V , Gate-to-Source Voltage (V)

Q , Total Gate Charge (nC)

I = -2.2A

V = -16V

D

DS

0.1

1

10

100

0.3 0.6 0.9 1.2 1.5

T = 25°C

T = 150°C

J

J

V = 0V

GS

SD

SD

A

-I , Reverse Drain Current (A)

-V , Source-to-Drain Voltage (V)

1

10

100

1 10 100

OPERATION IN THIS AREA LIMITED

BY R

DS(on)

Single Pulse

T

T

= 150 C

= 25 C

°

°

J

C

-V , Drain-to-Source Voltage (V)

-I , Drain Current (A)I , Drain Current (A)

DS

D

100us

1ms

10ms

IRF7422D2

www.irf.com 5

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

Power Mosfet Characteristics

R

DS

(on) , Drain-to-Source On Resistance (Ω)

R

DS

(on) , Drain-to-Source On Resistance (Ω)

0

.0

0

.1

0

.2

0

.3

0

.4

02468

A

I , Drain Current (A)

D

V = -5.0V

GS

V = -2.5V

GS

0

.04

0

.06

0

.08

0

.10

0

.12

0

.14

234567

A

GS

V , Gate-to-Source Voltage (V)

I = -4.3A

D

0.1

1

10

100

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Notes:

1. Duty factor D = t / t

2. Peak T =P x Z + T

1 2

J DM thJA A

P

t

t

DM

1

2

t , Rectangular Pulse Duration (sec)

Thermal Response (Z )

1

thJA

0.01

0.02

0.05

0.10

0.20

0.50

SINGLE PULSE

(THERMAL RESPONSE)

Fig 10. Typical On-Resistance Vs. Drain

Current

Fig 11. Typical On-Resistance Vs. Gate

Voltage

IRF7422D2

6 www.irf.com

Schottky Diode Characteristics

Fig. 13 - Typical Values of

Reverse Current Vs. Reverse

Voltage

Fig.14 - Typical Junction

Capacitance Vs. Reverse Voltage

Reverse Current - I

R

(mA)

Fig. 12 - Typical Forward Voltage Drop

Characteristics

0

.001

0.01

0.1

1

10

100

0 4 8 12 16 20

R

100°C

75°C

50°C

25°C

Reverse Voltage - V (V)

125°C

A

T = 150°C

J

100

1000

0 5 10 15 20

T = 25°C

J

Reverse Voltage - V (V)

R

T

Junction Capacitance - C (pF)

A

0.1

1

10

100

0.0 0.2 0.4 0.6 0.8 1

.0

FM

F

Instantaneous Forward Current - I (A)

Forward Voltage Drop - V (V)

T = 150°C

T = 125°C

T = 25°C

J

J

J

P1-P3 P4-P6 P7-P8

IRF7422D2TR

Mfr. #:

Buy IRF7422D2TR

Manufacturer:

Infineon Technologies

Description:

MOSFET P-CH 20V 4.3A 8-SOIC

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet

IRF7422D2TR