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SQJ415EP-T1_GE3

P1-P3P4-P6
SQJ415EP
www.vishay.com
Vishay Siliconix
S18-0087-Rev. A, 29-Jan-18
1
Document Number: 75876
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Automotive P-Channel 40 V (D-S) 175 °C MOSFET
FEATURES
• TrenchFET
®
power MOSFET
• AEC-Q101 qualified
• 100 % R
g
and UIS tested
• Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
Notes
a. Package limited
b. Pulse test; pulse width 300 μs, duty cycle 2 %
c. When mounted on 1" square PCB (FR4 material)
d. See solder profile (www.vishay.com/doc?73257
). For PowerPAK SO-8L, the end of the lead terminal is exposed copper (not plated) as a
result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to
ensure adequate bottom side solder interconnection
e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components
PRODUCT SUMMARY
V
DS
(V) -40
R
DS(on)
() at V
GS
= -10 V 0.0140
R
DS(on)
() at V
GS
= -4.5 V 0.0200
I
D
(A) -30
Configuration Single
Package PowerPAK SO-8L
PowerPAK
®
SO-8L Single
2
S
3
S
4
G
1
S
D
Bottom View
1
6.15 mm
5.13 mm
Top View
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-source voltage V
DS
-40
V
Gate-source voltage V
GS
± 20
Continuous drain current
T
C
= 25 °C
a
I
D
-30
A
T
C
= 125 °C -23
Continuous source current (diode conduction)
a
I
S
-30
Pulsed drain current
b
I
DM
-120
Single pulse avalanche current
L = 0.1 mH
I
AS
-25
Single pulse avalanche energy E
AS
31.2 mJ
Maximum power dissipation
b
T
C
= 25 °C
P
D
45
W
T
C
= 125 °C 15
Operating junction and storage temperature range T
J
, T
stg
-55 to +175
°C
Soldering recommendations (peak temperature)
d, e
260
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL LIMIT UNIT
Junction-to-ambient PCB mount
c
R
thJA
70
°C/W
Junction-to-case (drain) R
thJC
3.3
SQJ415EP
www.vishay.com
Vishay Siliconix
S18-0087-Rev. A, 29-Jan-18
2
Document Number: 75876
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width 300 μs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing
c. Independent of operating temperature
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0, I
D
= -250 μA -40 - -
V
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1.5 -2.0 -2.5
Gate-source leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
GS
= 0 V V
DS
= -40 V - - -1
μA V
GS
= 0 V V
DS
= -40 V, T
J
= 125 °C - - -50
V
GS
= 0 V V
DS
= -40 V, T
J
= 175 °C - - -150
On-state drain current
a
I
D(on)
V
GS
= -10 V V
DS
-5 V -30 - - A
Drain-source on-state resistance
a
R
DS(on)
V
GS
= -10 V I
D
= -10 A - 0.0115 0.0140
V
GS
= -10 V I
D
= -10 A, T
J
= 125 °C - - 0.0219
V
GS
= -10 V I
D
= -10 A, T
J
= 175 °C - - 0.0261
V
GS
= -4.5 V I
D
= -6 A - 0.0163 0.0200
Forward transconductance
b
g
fs
V
DS
= -15 V, I
D
= -10 A - 37 - S
Dynamic
b
Input capacitance C
iss
V
GS
= 0 V V
DS
= -25 V, f = 1 MHz
- 4405 6000
pF Output capacitance C
oss
- 248 350
Reverse transfer capacitance C
rss
- 234 320
Total gate charge
c
Q
g
V
GS
= -10 V V
DS
= -20 V, I
D
= -2.5 A
-6395
nC Gate-source charge
c
Q
gs
-9.5-
Gate-drain charge
c
Q
gd
-9.5-
Gate resistance R
g
f = 1 MHz 2 4.6 7
Turn-on delay time
c
t
d(on)
V
DD
= -20 V, R
L
= 8
I
D
-2.5 A, V
GEN
= -10 V, R
g
= 1
-1220
ns
Rise time
c
t
r
-410
Turn-off delay time
c
t
d(off)
-67110
Fall time
c
t
f
-1730
Source-Drain Diode Ratings and Characteristics
b
Pulsed current
a
I
SM
---120A
Forward voltage V
SD
I
F
= -10 A, V
GS
= 0 V - -0.82 -1.2 V
Body diode reverse recovery time t
rr
I
F
= -2.5 A, di/dt = 100 A/μs
-2655ns
Body diode reverse recovery charge Q
rr
-2150nC
Reverse recovery fall time t
a
-15-
ns
Reverse recovery rise time t
b
-11-
Body diode peak reverse recovery
current
I
RM(REC)
--1.6- A
SQJ415EP
www.vishay.com
Vishay Siliconix
S18-0087-Rev. A, 29-Jan-18
3
Document Number: 75876
For technical questions, contact: automostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
A
= 25 °C, unless otherwise noted)
Output Characteristics
Transconductance
Capacitance
Transfer Characteristics
On-Resistance vs. Drain Current
Gate Charge
10
100
1000
10000
0
20
40
60
80
100
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
2nd line
V
GS
= 10 V thru 5 V
V
GS
= 3 V
V
GS
= 4 V
10
100
1000
10000
0
15
30
45
60
75
0 1020304050
Axis Title
1st line
2nd line
2nd line
g
fs
- Transconductance (S)
I
D
- Drain Current (A)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
10
100
1000
10000
0
1300
2600
3900
5200
6500
0 8 16 24 32 40
Axis Title
1st line
2nd line
2nd line
C - Capacitance (pF)
V
DS
- Drain-to-Source Voltage (V)
2nd line
C
rss
C
oss
C
iss
10
100
1000
10000
0
16
32
48
64
80
0246810
Axis Title
1st line
2nd line
2nd line
I
D
- Drain Current (A)
V
GS
- Gate-to-Source Voltage (V)
2nd line
T
C
= 25 °C
T
C
=-55 °C
T
C
= 125 °C
0.00
0.01
0.02
0.03
0.04
0.05
0 1224364860
2nd line
R
DS(on)
- On-Resistance (Ω)
I
D
- Drain Current (A)
2nd line
V
GS
= 10 V
V
GS
= 4.5 V
10
100
1000
10000
0
2
4
6
8
10
0 1530456075
Axis Title
1st line
2nd line
2nd line
V
GS
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
2nd line
I
D
= 2.5 A
V
DS
= 20 V
P1-P3P4-P6

SQJ415EP-T1_GE3

Mfr. #:
Buy SQJ415EP-T1_GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET -40V Vds; +/-20V Vgs PowerPAK SO-8L
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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