Document Number: 73338
S10-0792-Rev. F, 05-Apr-10
www.vishay.com
5
Vishay Siliconix
Si1499DH
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
* The power dissipation P
D
is based on T
J(max)
= 150 °C, using
junction-to-case thermal resistance, and is more useful in settling the
upper dissipation limit for cases where additional heatsinking is
used. It is used to determine the current rating, when this rating falls
below the package limit.
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?73338
.
Current Derating*
0
1
2
3
4
5
6
0 2 5 5 0 7 5 100 125 150 175
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Package Limited
Normalized Thermal Transient Impedance, Junction-to-Ambient
10 10 1 1 0 600 10
-1 -2 -3 -4
10 100
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
1. Duty Cycle, D =
2. Per Unit Base = R
th J A
= 125 °C/W
3. T
JM
- T
A
= P
DM
Z
th J A
(t )
t
1
t
2
t
1
t
2
Notes:
4. Surface Mounted
P
DM
Normalized Thermal Transient Impedance, Junction-to-Foot
10
-3
10
-2
11010
-1
10
-4
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Duty Cycle = 0.5
Square Wave Pulse Duration (s)
Normalized Effective Transient
Thermal Impedance
Single Pulse
0.05
0.02
