Product Standards
Transistors with Built-in Resistor
DRC3144T0L
Absolute Maximum Ratings Ta = 25 C
Electrical Characteristics Ta = 25 C 3 C
Note
1.
Page
47 +30%
k
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Between emitter base resistance
R1 -30%
V
2.8 V
0.25 V
Input voltage
Vi(on) VCE = 0.2 V, IC = 5 mA
Vi(off) VCE = 5 V, IC = 100 μA 0.4
Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 0.5 mA
0.01 mA
Forward current transfer ratio
hFE VCE = 10 V, IC = 5 mA 160 460 -
Emitter-base cutoff current (Collector open)
IEBO VEB = 6 V, IC = 0
0.1 μA
Collector-emitter cutoff current (Base open)
ICEO VCE = 50 V, IB = 0 0.5 μA
Collector-base cutoff current (Emitter open)
ICBO VCB = 50 V, IE = 0
50 V
Parameter
Collector-emitter voltage (Base open)
VCEO IC = 2 mA, IB = 0
°C
Max Unit
Collector-base voltage (Emitter open)
VCBO IC = 10 μA, IE = 0 50 V
Tstg -55 to +150
Junction temperature Tj 150 °C
Total power dissipation PT
100
mW
Collector current IC
100
mA
Collector-emitter voltage (Base open) VCEO
50
V
Collector-base voltage (Emitter open) VCBO
50
V
Internal Connection
Resistance
value
R1
47
k
1of3
Unit: mm
Min Typ
SC-105AA
Collector
Low collector-emitter saturation voltage Vce(sat)
Halogen-free / RoHS compliant
High forward current transfer ratio hFE with excellent linearity
DRC3144T0L
Silicon NPN epitaxial planar type
For digital circuits
Complementary to DRA3144T
DRC9144T in SSSMini3 type package
Features
Marking Symbol:
NP
Code
Base
Emitter
SOT-723
Panasonic
Packaging
SSSMini3-F2-B
JEITA
Parameter Symbol Rating Unit
1.
2.
3.
Embossed type (Thermo-compression sealing) : 10 000 pcs / reel (standard)
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
+85 °COperating ambient temperature Topr -40 to
Symbol Conditions
Storage temperature
C
B
R
1
E
1.2
1.2
0.52
0.8
0.2
0.8
0.3
(0.4)
0.13
12
3
(0.4)
