TECHNICAL DATA
NPN SILICON LOW POWER TRANSISTOR
Qualified per MIL-PRF-19500/313
Devices Qualified Level
2N2432
2N2432A
JAN
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N2432 2N2432A Unit
Collector-Emitter Voltage
V
CEO
30 45 Vdc
Collector-Base Voltage
V
CBO
30 45 Vdc
Emitter-Collector Voltage
V
ECO
15 18 Vdc
Collector Current
I
C
100 mAdc
Total Power Dissipation @ T
A
= +25
0
C
(1)
@ T
C
= +25
0
C
(2)
P
T
300
600
mW
mW
Operating & Storage Junction Temp. Range
T
stg
T
J
-65 to +200
-65 to +175
0
C
0
C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
R
θJC
0.25 mW/
0
C
1) Derate linearly 2.0 mW/
0
C above T
A
> +25
0
C
2) Derate linearly 4.0 mW/
0
C above T
C
> +25
0
C
TO- 18*
(TO-206AA)
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (T
A
= 25
0
C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Emitter-Collector Breakdown Voltage
I
E
= 100 µAdc, I
B
= 0 2N2432
2N2432A
I
E
= 10 mAdc, I
B
= 0 Both
V
(BR)
ECO
15
18
10
Vdc
Collector-Emitter Breakdown Current
I
C
= 10 mAdc 2N2432
2N2432A
V
(BR)
CEO
30
45
Vdc
Collector-Emitter Cutoff Current
V
CB
= 25 Vdc 2N2432
V
CB
= 40 Vdc 2N2432A
I
CES
10
10
ηAdc
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