CMOS 1.8 V to 5.5 V, 2.5 Ω
SPDT Switch/2:1 Mux in Tiny SC70 Package
ADG779
Rev. A
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FEATURES
1.8 V to 5.5 V single supply
2.5 Ω on resistance
0.75 Ω on-resistance flatness
−3 dB bandwidth >200 MHz
Rail-to-rail operation
6-lead SC70 package
Fast switching times
t
ON
20 ns
t
OFF
6 ns
Typical power consumption (<0.01 μW)
TTL/CMOS compatible
APPLICATIONS
Battery-powered systems
Communication systems
Sample hold systems
Audio signal routing
Video switching
Mechanical reed relay replacements
FUNCTIONAL BLOCK DIAGRAM
IN
ADG779
S2
S1
D
SWITCHES SHOWN FOR
A LOGIC 1 INPUT
02491-001
Figure 1.
GENERAL DESCRIPTION
The ADG779 is a monolithic CMOS SPDT (single-pole,
double-throw) switch. This switch is designed on a submicron
process that provides low power dissipation yet gives high
switching speed, low on resistance, and low leakage currents.
The ADG779 operates from a single supply range of 1.8 V to
5.5 V, making it ideal for use in battery-powered instruments
and with the new generation of DACs and ADCs from Analog
Devices, Inc.
Each switch of the ADG779 conducts equally well in both
directions when on. The ADG779 exhibits break-before-make
switching action.
Because of the advanced submicron process, −3 dB bandwidth
of greater than 200 MHz can be achieved.
The ADG779 is available in a 6-lead SC70 package.
PRODUCT HIGHLIGHTS
1. Tiny 6-Lead SC70 Package.
2. 1.8 V to 5.5 V Single-Supply Operation. The ADG779
offers high performance, including low on resistance and
fast switching times, and is fully specified and guaranteed
with 3 V and 5 V supply rails.
3. Ver y Low R
ON
(5 Ω max at 5 V, 10 Ω max at 3 V). At 1.8 V
operation, R
ON
is typically 40 Ω over the temperature range.
4. On-Resistance Flatness (R
FLAT (ON)
) (0.75 Ω typ).
5. −3 dB Bandwidth > 200 MHz.
6. Low Power Dissipation. CMOS construction ensures low
power dissipation.
7. 14 ns Switching Times.
