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Document Number: 73779
S-81448-Rev. C, 23-Jun-08
Vishay Siliconix
Si5485DU
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Source-Drain Diode Forward Voltage
Threshold Voltage
30
0.0 0.2 0.4 0.6 0.8 1.0 1.2
1
10
T
J
= 150 °C
V
SD
- Source-to-Drain Voltage (V)
) A ( t n e r r u C e c r u o S -I
S
T
J
= 25 °C
0.7
0.
8
0.9
1.0
1.1
1.2
1.3
1.4
- 50 - 25 0 25 50 75 100 125 150
T
J
- Temperature (°C)
V
)
h
t(
S
G
)
V(
I
D
= 250 µA
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
125 °C
25 °C
0.00
0.02
0.04
0.06
0.08
0.10
012345
I
D
= 5.9 A
V
GS
- Gate-to-Source Voltage (V)
R
)no(SD
(Ω) ecnatsiseR-nO ecruoS-ot-niarD -
0
30
40
10
20
)W(
rewoP
Time (s)
1 1000 0.1 0.01 0.001 10 100
50
Safe Operating Area, Junction-to-Ambient
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specified
100
1
0.1 1 10 100
0.01
10
1 s
)
A(
t
nerru
C
n
i
ar
D
-
I
D
0.1
T
A
= 25 °C
Single Pulse
10 s
DC
10 ms
100 ms
1 ms
BVDSS limited
Limited by R
DS(on)
*