Philips Semiconductors
PHP3055E series
TrenchMOS™ standard level FET
Product data Rev. 06 — 25 March 2002 7 of 14
9397 750 09354
© Koninklijke Philips Electronics N.V. 2002. All rights reserved.
T
j
=25°CT
j
=25°C and 175 °C; V
DS
> I
D
xR
DSon
Fig 6. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
T
j
=25°C
Fig 8. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature.
0
2
4
6
8
10
0 0.4 0.8 1.2 1.6 2
V
DS
(V)
I
D
(A)
5.5 V
T
j
= 25 C
V
GS
= 4.5 V
6 V
6.5 V
7 V
10 V 8 V
5 V
0
2
4
6
8
10
02468
V
GS
(V)
I
D
(A)
V
DS
> I
D
x R
DSon
T
j
= 25 ºC
175 ºC
0
0.1
0.2
0.3
0.4
0.5
0246810
I
D
(A)
R
DSon
(Ω)
V
GS
= 5 V T
j
= 25 ºC
7 V
8 V
6.5 V
6 V
5.5V
10 V
0
0.6
1.2
1.8
2.4
-60 0 60 120 180
T
j
(
o
C)
a
a
R
DSon
R
DSon 25 C
°
()
----------------------------
=
