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NL17SH08P5T5G

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2011
August, 2011 − Rev. 1
1 Publication Order Number:
NL17SH08/D
NL17SH08
Single 2-Input AND Gate
The NL17SH08 is an advanced high speed CMOS 2−input AND
gate fabricated with silicon gate CMOS technology.
The internal circuit is composed of multiple stages, including a
buffer output which provides high noise immunity and stable output.
The NL17SH08 input structure provides protection when voltages
up to 7.0 V are applied, regardless of the supply voltage. This allows
the NL17SH08 to be used to interface 5.0 V circuits to
3.0 V circuits.
Features
• High Speed: t
PD
= 3.5 ns (Typ) at V
CC
= 5.0 V
• Low Power Dissipation: I
CC
= 1.0 mA (Max) at T
A
= 25°C
• Power Down Protection Provided on Inputs
• Balanced Propagation Delays
• Pin and Function Compatible with Other Standard Logic Families
• These are Pb−Free Devices
V
CC
IN B
IN A
OUT Y
GND
IN A
IN B
OUT Y
&
Figure 1. Pinout (Top View)
Figure 2. Logic Symbol
1
2
3
4
5
MARKING
DIAGRAM
http://onsemi.com
L
L
H
H
L
H
L
H
FUNCTION TABLE
Inputs Output
AB
L
L
L
H
Y
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
PIN ASSIGNMENT
1
2
3IN B
IN A
GND
4
5V
CC
OUT Y
SOT−953
CASE 527AE
E = Specific Device Code
M = Month Code
EM
1
NL17SH08
http://onsemi.com
2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage −0.5 to +7.0 V
V
IN
DC Input Voltage −0.5 to +7.0 V
V
OUT
DC Output Voltage −0.5 to V
CC
+0.5 V
I
IK
DC Input Diode Current −20 mA
I
OK
DC Output Diode Current ±20 mA
I
OUT
DC Output Sink Current ±25 mA
I
CC
DC Supply Current per Supply Pin 50 mA
T
STG
Storage Temperature Range −65 to +150 °C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds 260 °C
T
J
Junction Temperature Under Bias +150 °C
P
D
Power Dissipation in Still Air 50 mW
MSL Moisture Sensitivity Level 1
F
R
Flammability Rating Oxygen Index: 28 to 34 UL 94 V−0 @ 0.125 in
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 1) ±100 mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol Characteristics Min Max Unit
V
CC
DC Supply Voltage 2.0 5.5 V
V
IN
DC Input Voltage 0.0 5.5 V
V
OUT
DC Output Voltage 0.0 V
CC
V
T
A
Operating Temperature Range −55 +125 °C
t
r
, t
f
Input Rise and Fall Time V
CC
= 3.3 V ± 0.3 V
V
CC
= 5.0 V ± 0.5 V
0
0
100
20
ns/V
Device Junction Temperature versus
Time to 0.1% Bond Failures
Junction
Temperature °C
Time, Hours Time, Years
80 1,032,200 117.8
90 419,300 47.9
100 178,700 20.4
110 79,600 9.4
120 37,000 4.2
130 17,800 2.0
140 8,900 1.0
1
1 10 100
1000
TIME, YEARS
NORMALIZED FAILURE RATE
T
J
= 80
C°
T
J
= 90
C°
T
J
= 100 C°
T
J
= 110 C°
T
J
= 130 C°
T
J
= 120 C°
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 3. Failure Rate vs. Time
Junction Temperature
NL17SH08
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3
DC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions
V
CC
(V)
T
A
= 255C T
A
v 855C *555C to 1255C
Unit
Min Typ Max Min Max Min Max
V
IH
Minimum High−Level
Input Voltage
2.0
3.0
4.5
5.5
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
1.5
2.1
3.15
3.85
V
V
IL
Maximum Low−Level
Input Voltage
2.0
3.0
4.5
5.5
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
0.5
0.9
1.35
1.65
V
V
OH
Minimum High−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OH
= −50 mA
2.0
3.0
4.5
1.9
2.9
4.4
2.0
3.0
4.5
1.9
2.9
4.4
1.9
2.9
4.4
V
V
IN
= V
IH
or V
IL
I
OH
= −4 mA
I
OH
= −8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
V
OL
Maximum Low−Level
Output Voltage
V
IN
= V
IH
or V
IL
V
IN
= V
IH
or V
IL
I
OL
= 50 mA
2.0
3.0
4.5
0.0
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
IN
= V
IH
or V
IL
I
OL
= 4 mA
I
OL
= 8 mA
3.0
4.5
0.36
0.36
0.44
0.44
0.52
0.52
I
IN
Maximum Input
Leakage Current
V
IN
= 5.5 V or GND 0 to 5.5 $0.1 $1.0 $1.0
mA
I
CC
Maximum Quiescent
Supply Current
V
IN
= V
CC
or GND 5.5 1.0 10 40
mA
AC ELECTRICAL CHARACTERISTICS Input t
r
= t
f
= 3.0 ns
Symbol Parameter Test Conditions
T
A
= 25°C T
A
≤ 85°C −55 ≤ T
A
≤ 125°C
Unit
Min Typ Max Min Max Min Max
t
PLH
,
t
PHL
Maximum Propaga-
tion Delay,
Input A or B to Y
V
CC
= 3.3 ± 0.3 V C
L
= 15 pF
C
L
= 50 pF
4.1
5.9
8.8
12.3
10.5
14.0
12.5
16.5
ns
V
CC
= 5.0 ± 0.5 V C
L
= 15 pF
C
L
= 50 pF
3.5
4.2
5.9
7.9
7.0
9.0
9.0
11.0
C
IN
Maximum Input Ca-
pacitance
5.5 10 10 10 pF
C
PD
Power Dissipation Capacitance (Note 2)
Typical @ 25°C, V
CC
= 5.0 V
pF
11
2. C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating current consumption without load.
Average operating current can be obtained by the equation: I
CC(OPR
)
= C
PD
V
CC
f
in
+ I
CC
. C
PD
is used to determine the no−load dynamic
power consumption; P
D
= C
PD
V
CC
2
f
in
+ I
CC
V
CC
.
P1-P3P4-P5

NL17SH08P5T5G

Mfr. #:
Buy NL17SH08P5T5G
Manufacturer:
ON Semiconductor
Description:
Logic Gates 2-INPUT AND GATE
Lifecycle:
New from this manufacturer.
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